Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2A, 1.5A, Rds On (max.) @ Id, Vgs: 136 mOhm @ 1A, 4.5V,
Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, 4.5V Drive, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, 4.5A, Rds On (max.) @ Id, Vgs: 39 mOhm @ 6A, 10V,
Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 400mA, 1.5A, Rds On (max.) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V,