Tranzistory - FET, MOSFET - polia

FW276-TL-2H

diel: 3348

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 450V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 700mA, Rds On (max.) @ Id, Vgs: 12.1 Ohm @ 350mA, 10V, Vgs (th) (Max) @ Id: 4.5V @ 1mA,

NVMD6N03R2G

diel: 2901

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 32 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

MCH6601-TL-E

diel: 168759

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 200mA, Rds On (max.) @ Id, Vgs: 10.4 Ohm @ 50mA, 4V,

NTQD6866R2G

diel: 2711

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.7A, Rds On (max.) @ Id, Vgs: 32 mOhm @ 6.9A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

NTUD3128NT5G

diel: 2747

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 160mA, Rds On (max.) @ Id, Vgs: 3 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

NTLJD3181PZTAG

diel: 2807

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.2A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

FDY4000CZ

diel: 130404

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 600mA, 350mA, Rds On (max.) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDG6318P

diel: 123017

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 500mA, Rds On (max.) @ Id, Vgs: 780 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

ECH8667-TL-HX

diel: 2888

EFC4618R-P-TR

diel: 2908

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, 2.5V Drive,

ECH8653-S-TL-H

diel: 2924

MCH6603-TL-H

diel: 2889

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, 1.5V Drive, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 140mA, Rds On (max.) @ Id, Vgs: 23 Ohm @ 40mA, 4V,

FDMS9620S

diel: 127765

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.5A, 10A, Rds On (max.) @ Id, Vgs: 21.5 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

EMH2417R-TL-H

diel: 156902

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, 2.5V Drive, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11A, Rds On (max.) @ Id, Vgs: 10 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1.3V @ 1mA,

FDW2511NZ

diel: 2697

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.1A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 7.1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

NDS9947

diel: 2668

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NTJD4001NT1

diel: 2735

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 250mA, Rds On (max.) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

FDS6993

diel: 2762

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.3A, 6.8A, Rds On (max.) @ Id, Vgs: 55 mOhm @ 4.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NTJD4105CT4G

diel: 2731

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, 8V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 630mA, 775mA, Rds On (max.) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

NTJD2152PT1G

diel: 2674

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 8V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 775mA, Rds On (max.) @ Id, Vgs: 300 mOhm @ 570mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

NTMFD4C86NT3G

diel: 29372

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11.3A, 18.1A, Rds On (max.) @ Id, Vgs: 5.4 mOhm @ 30A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

NTJD4158CT2G

diel: 2806

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 250mA, 880mA, Rds On (max.) @ Id, Vgs: 1.5 Ohm @ 10mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

NTHD4401PT3

diel: 2756

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.1A, Rds On (max.) @ Id, Vgs: 155 mOhm @ 2.1A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

FQS4901TF

diel: 139071

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 400V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 450mA, Rds On (max.) @ Id, Vgs: 4.2 Ohm @ 225mA, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

FDS4885C

diel: 2726

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.5A, 6A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 250µA,

HUF76407DK8T

diel: 2709

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Rds On (max.) @ Id, Vgs: 90 mOhm @ 3.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NTHD3100CT1

diel: 2734

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.9A, 3.2A, Rds On (max.) @ Id, Vgs: 80 mOhm @ 2.9A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

ECH8662-TL-H

diel: 2834

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.5A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 3.5A, 4.5V,

FDQ7238AS

diel: 2841

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 14A, 11A, Rds On (max.) @ Id, Vgs: 13.2 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NTQD6866R2

diel: 2733

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.7A, Rds On (max.) @ Id, Vgs: 32 mOhm @ 6.9A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

EFC4618R-TR

diel: 2913

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard,

SSD2007ASTF

diel: 2740

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2A, Rds On (max.) @ Id, Vgs: 300 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

FD6M033N06

diel: 2812

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 73A, Rds On (max.) @ Id, Vgs: 3.3 mOhm @ 40A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

FDS6912

diel: 99723

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 28 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

FDM2509NZ

diel: 2731

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8.7A, Rds On (max.) @ Id, Vgs: 18 mOhm @ 8.7A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

NTUD3127CT5G

diel: 2739

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 160mA, 140mA, Rds On (max.) @ Id, Vgs: 3 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,