Tranzistory - FET, MOSFET - polia

SP8M70TB1

diel: 89658

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 250V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, 2.5A, Rds On (max.) @ Id, Vgs: 1.63 Ohm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

SI1967DH-T1-E3

diel: 177519

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.3A, Rds On (max.) @ Id, Vgs: 490 mOhm @ 910mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

SI7218DN-T1-E3

diel: 159065

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 24A, Rds On (max.) @ Id, Vgs: 25 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SQJ914EP-T1_GE3

diel: 2508

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 30A (Tc), Rds On (max.) @ Id, Vgs: 12 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

SI5948DU-T1-GE3

diel: 153924

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A (Tc), Rds On (max.) @ Id, Vgs: 82 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

SIS990DN-T1-GE3

diel: 178823

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 12.1A, Rds On (max.) @ Id, Vgs: 85 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

SI7220DN-T1-E3

diel: 82356

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.4A, Rds On (max.) @ Id, Vgs: 60 mOhm @ 4.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SQJ946EP-T1_GE3

diel: 173017

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15A (Tc), Rds On (max.) @ Id, Vgs: 33 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

SIS903DN-T1-GE3

diel: 2575

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A (Tc), Rds On (max.) @ Id, Vgs: 20.1 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

SIA921EDJ-T4-GE3

diel: 178268

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 59 mOhm @ 3.6A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

NX3008PBKS,115

diel: 177372

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 200mA, Rds On (max.) @ Id, Vgs: 4.1 Ohm @ 200mA, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

NX3008CBKS,115

diel: 146141

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 350mA, 200mA, Rds On (max.) @ Id, Vgs: 1.4 Ohm @ 350mA, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

IPG20N06S4L26AATMA1

diel: 186995

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, Rds On (max.) @ Id, Vgs: 26 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 10µA,

IPG20N10S4L35ATMA1

diel: 169062

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 16µA,

IPG16N10S461AATMA1

diel: 195163

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 16A, Rds On (max.) @ Id, Vgs: 61 mOhm @ 16A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 9µA,

IPG20N04S4L08ATMA1

diel: 128418

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, Rds On (max.) @ Id, Vgs: 8.2 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 22µA,

IRF7351TRPBF

diel: 111531

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 17.8 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 4V @ 50µA,

IPG20N06S2L35AATMA1

diel: 128569

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 55V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2A (Tc), Rds On (max.) @ Id, Vgs: 35 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2V @ 27µA,

IRF9953TRPBF

diel: 182561

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.3A, Rds On (max.) @ Id, Vgs: 250 mOhm @ 1A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

IPG20N04S412AATMA1

diel: 165975

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, Rds On (max.) @ Id, Vgs: 12.2 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 4V @ 15µA,

EPC2107ENGRT

diel: 82626

Typ FET: 3 N-Channel (Half Bridge + Synchronous Bootstrap), Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.7A, 500mA, Rds On (max.) @ Id, Vgs: 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA,

FDS4935A

diel: 147695

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, Rds On (max.) @ Id, Vgs: 23 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NTMFD4C87NT3G

diel: 32594

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11.7A, 14.9A, Rds On (max.) @ Id, Vgs: 5.4 mOhm @ 30A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

FDS9926A

diel: 151006

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.5A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDS9934C

diel: 179792

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.5A, 5A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

ECH8655R-R-TL-H

diel: 144107

NTJD4001NT1G

diel: 105829

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 250mA, Rds On (max.) @ Id, Vgs: 1.5 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

NTJD4152PT1G

diel: 195187

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 880mA, Rds On (max.) @ Id, Vgs: 260 mOhm @ 880mA, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

NDS9945

diel: 124416

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NVMFD5853NLT1G

diel: 113880

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 12A, Rds On (max.) @ Id, Vgs: 10 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

FW4604-TL-2W

diel: 128054

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, 4.5V Drive, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, 4.5A, Rds On (max.) @ Id, Vgs: 39 mOhm @ 6A, 10V,

DMP58D0SV-7

diel: 194639

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 160mA, Rds On (max.) @ Id, Vgs: 8 Ohm @ 100mA, 5V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

DMN26D0UDJ-7

diel: 112847

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 240mA, Rds On (max.) @ Id, Vgs: 3 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1.05V @ 250µA,

DMG6602SVTQ-7

diel: 143884

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.4A, 2.8A, Rds On (max.) @ Id, Vgs: 60 mOhm @ 3.1A, 10V, Vgs (th) (Max) @ Id: 2.3V @ 250µA,

SSM6P36FE,LM

diel: 140070

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 330mA, Rds On (max.) @ Id, Vgs: 1.31 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

SSM6N48FU,LF

diel: 3270

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 100mA (Ta), Rds On (max.) @ Id, Vgs: 3.2 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,