Tranzistory - FET, MOSFET - polia

IRF7329TRPBF

diel: 126207

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9.2A, Rds On (max.) @ Id, Vgs: 17 mOhm @ 9.2A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

Na priania

IRF9389TRPBF

diel: 156541

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.8A, 4.6A, Rds On (max.) @ Id, Vgs: 27 mOhm @ 6.8A, 10V, Vgs (th) (Max) @ Id: 2.3V @ 10µA,

Na priania

IRF7306TR

diel: 84818

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.6A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 1.8A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

IRF9395MTRPBF

diel: 53923

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 14A, Rds On (max.) @ Id, Vgs: 7 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 50µA,

Na priania

IRF9910TRPBF

diel: 144138

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10A, 12A, Rds On (max.) @ Id, Vgs: 9.3 mOhm @ 12A, 10V, Vgs (th) (Max) @ Id: 2.55V @ 250µA,

Na priania

IPG20N04S4L07AATMA1

diel: 101318

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, Rds On (max.) @ Id, Vgs: 7.2 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 30µA,

Na priania

SI5504BDC-T1-E3

diel: 163999

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, 3.7A, Rds On (max.) @ Id, Vgs: 65 mOhm @ 3.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

SIS932EDN-T1-GE3

diel: 2519

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A (Tc), Rds On (max.) @ Id, Vgs: 22 mOhm @ 10A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Na priania

SQJB90EP-T1_GE3

diel: 141525

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 80V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 30A (Tc), Rds On (max.) @ Id, Vgs: 21.5 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 250µA,

Na priania

SI4564DY-T1-GE3

diel: 118890

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10A, 9.2A, Rds On (max.) @ Id, Vgs: 17.5 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Na priania

SQ4920EY-T1_GE3

diel: 97887

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 14.5 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

SI3993CDV-T1-GE3

diel: 136053

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.9A, Rds On (max.) @ Id, Vgs: 111 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Na priania

SI4559ADY-T1-GE3

diel: 141946

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.3A, 3.9A, Rds On (max.) @ Id, Vgs: 58 mOhm @ 4.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

SI3932DV-T1-GE3

diel: 199469

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.7A, Rds On (max.) @ Id, Vgs: 58 mOhm @ 3.4A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Na priania

SQ1912AEEH-T1_GE3

diel: 2494

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 800mA (Tc), Rds On (max.) @ Id, Vgs: 280 mOhm @ 1.2A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania

SIA928DJ-T1-GE3

diel: 170673

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A (Tc), Rds On (max.) @ Id, Vgs: 25 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Na priania

SQJ951EP-T1_GE3

diel: 123902

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 30A, Rds On (max.) @ Id, Vgs: 17 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

SQ4917EY-T1_GE3

diel: 91342

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A (Tc), Rds On (max.) @ Id, Vgs: 48 mOhm @ 4.3A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

SIA519EDJ-T1-GE3

diel: 128968

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

Na priania

DMN65D8LDW-7

diel: 141176

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 180mA, Rds On (max.) @ Id, Vgs: 6 Ohm @ 115mA, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

Na priania

DMN53D0LDW-7

diel: 110016

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 360mA, Rds On (max.) @ Id, Vgs: 1.6 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania

ZXMD63C02XTA

diel: 30114

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Rds On (max.) @ Id, Vgs: 130 mOhm @ 1.7A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA (Min),

Na priania

DMG1024UV-7

diel: 127188

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.38A, Rds On (max.) @ Id, Vgs: 450 mOhm @ 600mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

QS8K51TR

diel: 139893

Typ FET: 2 N-Channel (Dual), Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2A,

Na priania

QH8MA3TCR

diel: 185267

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, 5.5A, Rds On (max.) @ Id, Vgs: 29 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania

SH8K12TB1

diel: 185191

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, Rds On (max.) @ Id, Vgs: 42 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania

UM6K34NTCN

diel: 167601

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 0.9V Drive, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 200mA, Rds On (max.) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V, Vgs (th) (Max) @ Id: 800mV @ 1mA,

Na priania

PMDT290UCE,115

diel: 135417

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 800mA, 550mA, Rds On (max.) @ Id, Vgs: 380 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 950mV @ 250µA,

Na priania

NX3020NAKVYL

diel: 108530

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 200mA, Rds On (max.) @ Id, Vgs: 4.5 Ohm @ 100mA, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania

NX3020NAKS,115

diel: 147530

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 180mA, Rds On (max.) @ Id, Vgs: 4.5 Ohm @ 100mA, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania

PMDPB80XP,115

diel: 184951

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, 1.8V Drive, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.7A, Rds On (max.) @ Id, Vgs: 102 mOhm @ 2.7A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania