Tranzistory - FET, MOSFET - polia

FDS9933BZ

diel: 5427

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.9A, Rds On (max.) @ Id, Vgs: 46 mOhm @ 4.9A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDW9926A

diel: 2756

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 32 mOhm @ 4.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

VEC2415-TL-E

diel: 3310

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, Rds On (max.) @ Id, Vgs: 80 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 2.6V @ 1mA,

FDPC8011S

diel: 43392

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 13A, 27A, Rds On (max.) @ Id, Vgs: 6 mOhm @ 13A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

NTJD4105CT4

diel: 2730

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, 8V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 630mA, 775mA, Rds On (max.) @ Id, Vgs: 375 mOhm @ 630mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDW2516NZ

diel: 2695

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.8A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 5.8A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

NDS8961

diel: 2685

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.1A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 3.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NTLJD2104PTBG

diel: 2768

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.4A, Rds On (max.) @ Id, Vgs: 90 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 800mV @ 250µA,

SP8M6FU6TB

diel: 2843

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, 3.5A, Rds On (max.) @ Id, Vgs: 51 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

SP8M7TB

diel: 2650

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, 7A, Rds On (max.) @ Id, Vgs: 51 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

SP8M10TB

diel: 2633

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, 4.5A, Rds On (max.) @ Id, Vgs: 25 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

IRF7507TRPBF

diel: 173654

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.4A, 1.7A, Rds On (max.) @ Id, Vgs: 140 mOhm @ 1.7A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,

IRF6702M2DTR1PBF

diel: 2812

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15A, Rds On (max.) @ Id, Vgs: 6.6 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.35V @ 25µA,

IRF7751TR

diel: 2708

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

IRF5852TRPBF

diel: 2825

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.7A, Rds On (max.) @ Id, Vgs: 90 mOhm @ 2.7A, 4.5V, Vgs (th) (Max) @ Id: 1.25V @ 250µA,

IRF7311PBF

diel: 80304

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.6A, Rds On (max.) @ Id, Vgs: 29 mOhm @ 6A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,

SIA914ADJ-T1-GE3

diel: 101260

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 43 mOhm @ 3.7A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

SI3529DV-T1-E3

diel: 2823

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A, 1.95A, Rds On (max.) @ Id, Vgs: 125 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SI4834BDY-T1-GE3

diel: 2808

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.7A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SI4569DY-T1-E3

diel: 2765

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.6A, 7.9A, Rds On (max.) @ Id, Vgs: 27 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

SI5915DC-T1-GE3

diel: 2892

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 8V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.4A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 3.4A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

SI7925DN-T1-GE3

diel: 2863

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.8A, Rds On (max.) @ Id, Vgs: 42 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

SIZ700DT-T1-GE3

diel: 110609

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 16A, Rds On (max.) @ Id, Vgs: 8.6 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

SI3588DV-T1-GE3

diel: 2780

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A, 570mA, Rds On (max.) @ Id, Vgs: 80 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

SI7540DP-T1-E3

diel: 2781

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.6A, 5.7A, Rds On (max.) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

SI4562DY-T1-GE3

diel: 2828

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Rds On (max.) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

SQJ962EP-T1-GE3

diel: 3339

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 60 mOhm @ 4.3A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

SI4562DY-T1-E3

diel: 2860

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Rds On (max.) @ Id, Vgs: 25 mOhm @ 7.1A, 4.5V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

SI3983DV-T1-E3

diel: 2699

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.1A, Rds On (max.) @ Id, Vgs: 110 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

SIA913DJ-T1-GE3

diel: 2844

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 3.3A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

SI3983DV-T1-GE3

diel: 2859

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.1A, Rds On (max.) @ Id, Vgs: 110 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

SI5515DC-T1-E3

diel: 153398

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.4A, 3A, Rds On (max.) @ Id, Vgs: 40 mOhm @ 4.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

SI1557DH-T1-E3

diel: 2849

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.2A, 770mA, Rds On (max.) @ Id, Vgs: 235 mOhm @ 1.2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,

JANTX2N7334

diel: 2911

Typ FET: 4 N-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1A, Rds On (max.) @ Id, Vgs: 700 mOhm @ 600mA, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

UPA2385T1P-E1-A

diel: 2930

PMDPB70EN,115

diel: 2938

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, Rds On (max.) @ Id, Vgs: 57 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,