Tranzistory - FET, MOSFET - polia

TPCF8304(TE85L,F,M

diel: 2938

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.2A, Rds On (max.) @ Id, Vgs: 72 mOhm @ 1.6A, 10V, Vgs (th) (Max) @ Id: 1.2V @ 1mA,

DMC25D0UVT-7

diel: 145606

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 25V, 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 400mA, 3.2A, Rds On (max.) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

DMN4031SSD-13

diel: 188923

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.2A, Rds On (max.) @ Id, Vgs: 31 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

DMN601DWKQ-7

diel: 16267

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 305mA (Ta), Rds On (max.) @ Id, Vgs: 2 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

DMP1046UFDB-13

diel: 131033

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.8A, Rds On (max.) @ Id, Vgs: 61 mOhm @ 3.6A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

DMN2036UCB4-7

diel: 9926

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Standard,

ZXMC4559DN8TA

diel: 76154

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.6A, 2.6A, Rds On (max.) @ Id, Vgs: 55 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

DMC3028LSD-13

diel: 124769

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.6A, 6.8A, Rds On (max.) @ Id, Vgs: 28 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SI4936ADY-T1-GE3

diel: 77137

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.4A, Rds On (max.) @ Id, Vgs: 36 mOhm @ 5.9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SI4920DY-T1-E3

diel: 2966

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 25 mOhm @ 6.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

NTTFS5C471NLTAG

diel: 297

EFC6602R-TR

diel: 159385

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 2.5V Drive,

FDPC1002S

diel: 2951

FDMS7606

diel: 2977

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11.5A, 12A, Rds On (max.) @ Id, Vgs: 11.4 mOhm @ 11.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NVMFD5C446NLT1G

diel: 6539

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 25A (Ta), 145A (Tc), Rds On (max.) @ Id, Vgs: 2.65 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 90µA,

FDC6306P

diel: 165018

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.9A, Rds On (max.) @ Id, Vgs: 170 mOhm @ 1.9A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDG6301N-F085P

diel: 2942

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 220mA (Ta), Rds On (max.) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDG6332C-F085

diel: 342

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 700mA, 600mA, Rds On (max.) @ Id, Vgs: 300 mOhm @ 700mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDS8984

diel: 198032

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, Rds On (max.) @ Id, Vgs: 23 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

DN2625DK6-G

diel: 28122

Typ FET: 2 N-Channel (Dual), Funkcia FET: Depletion Mode, Drain to Source Voltage (Vdss): 250V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.1A, Rds On (max.) @ Id, Vgs: 3.5 Ohm @ 1A, 0V,

UPA2672T1R-E2-AX

diel: 5419

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, 1.8V Drive, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 67 mOhm @ 2A, 4.5V,

QS6K1TR

diel: 117098

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1A, Rds On (max.) @ Id, Vgs: 238 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

QS8J4TR

diel: 171717

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 56 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

SP8K3TB

diel: 123516

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

SH8KA4TB

diel: 198737

Typ FET: 2 N-Channel (Dual), Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9A, Rds On (max.) @ Id, Vgs: 21.4 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

VKM40-06P1

diel: 1050

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 38A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 25A, 10V, Vgs (th) (Max) @ Id: 5.5V @ 3mA,

GWM100-0085X1-SMD SAM

diel: 2495

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 85V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 103A, Rds On (max.) @ Id, Vgs: 6.2 mOhm @ 75A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

GWM100-0085X1-SMD

diel: 2946

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 85V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 103A, Rds On (max.) @ Id, Vgs: 6.2 mOhm @ 75A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

GMM3X160-0055X2-SMDSAM

diel: 3108

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 55V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 150A, Vgs (th) (Max) @ Id: 4V @ 1mA,

CSD87350Q5D

diel: 68849

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 40A, Rds On (max.) @ Id, Vgs: 5.9 mOhm @ 20A, 8V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

CSD86336Q3DT

diel: 2714

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, 5V Drive, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A (Ta), Rds On (max.) @ Id, Vgs: 9.1 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 1.9V @ 250µA, 1.6V @ 250µA,

TSM4925DCS RLG

diel: 10771

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.1A (Ta), Rds On (max.) @ Id, Vgs: 25 mOhm @ 7.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

IRF7328TRPBF

diel: 121945

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

CTLDM7120-M832DS BK

diel: 3005

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1A (Ta), Rds On (max.) @ Id, Vgs: 100 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 1mA,

MCMNP517-TP

diel: 151419

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, 1.8V Drive, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, 4.1A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

SLA5061

diel: 9369

Typ FET: 3 N and 3 P-Channel (3-Phase Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10A, 6A, Rds On (max.) @ Id, Vgs: 140 mOhm @ 5A, 4V,