Tranzistory - FET, MOSFET - polia

EMH2407-S-TL-H

diel: 2884

NTND3184NZTAG

diel: 107176

Typ FET: 2 N-Channel (Dual), Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 220mA (Ta), Rds On (max.) @ Id, Vgs: 1.5 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

FW344A-TL-2W

diel: 2933

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, 4V Drive, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, 3.5A, Rds On (max.) @ Id, Vgs: 64 mOhm @ 4.5A, 10V,

CPH5617-TL-E

diel: 186363

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 150mA, Rds On (max.) @ Id, Vgs: 3.7 Ohm @ 80mA, 4V,

FDW2503N

diel: 2761

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.5A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 5.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDW2506P

diel: 2777

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.3A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 5.3A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

MMDF2P02ER2G

diel: 2699

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A, Rds On (max.) @ Id, Vgs: 250 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NDS8947

diel: 3294

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 65 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 2.8V @ 250µA,

NTZD3152PT1H

diel: 106213

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 430mA, Rds On (max.) @ Id, Vgs: 900 mOhm @ 430mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

NTGD4161PT1G

diel: 2811

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.5A, Rds On (max.) @ Id, Vgs: 160 mOhm @ 2.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

FDC6020C

diel: 2737

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.9A, 4.2A, Rds On (max.) @ Id, Vgs: 27 mOhm @ 5.9A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

NTMD5836NLR2G

diel: 2882

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9A, 5.7A, Rds On (max.) @ Id, Vgs: 12 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SI5944DU-T1-E3

diel: 2715

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 112 mOhm @ 3.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SI1016X-T1-E3

diel: 2759

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 485mA, 370mA, Rds On (max.) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

SI5904DC-T1-GE3

diel: 2807

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.1A, Rds On (max.) @ Id, Vgs: 75 mOhm @ 3.1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

SI9936BDY-T1-GE3

diel: 2872

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

VQ2001P-2

diel: 2875

Typ FET: 4 P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 600mA, Rds On (max.) @ Id, Vgs: 2 Ohm @ 1A, 12V, Vgs (th) (Max) @ Id: 4.5V @ 1mA,

SIA911DJ-T1-GE3

diel: 2844

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 94 mOhm @ 2.8A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

SI4814BDY-T1-E3

diel: 3376

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10A, 10.5A, Rds On (max.) @ Id, Vgs: 18 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

SI4818DY-T1-GE3

diel: 2835

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.3A, 7A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 6.3A, 10V, Vgs (th) (Max) @ Id: 800mV @ 250µA (Min),

SI7904DN-T1-E3

diel: 2818

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.3A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 7.7A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 935µA,

SI5920DC-T1-GE3

diel: 2868

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 8V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 32 mOhm @ 6.8A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

SI5519DU-T1-GE3

diel: 2823

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 36 mOhm @ 6.1A, 4.5V, Vgs (th) (Max) @ Id: 1.8V @ 250µA,

SI1903DL-T1-E3

diel: 2791

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 410mA, Rds On (max.) @ Id, Vgs: 995 mOhm @ 410mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

SI1905DL-T1-E3

diel: 2724

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 8V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 570mA, Rds On (max.) @ Id, Vgs: 600 mOhm @ 570mA, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA (Min),

SI6983DQ-T1-E3

diel: 2714

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.6A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 5.4A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 400µA,

VQ2001P

diel: 2906

Typ FET: 4 P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 600mA, Rds On (max.) @ Id, Vgs: 2 Ohm @ 1A, 12V, Vgs (th) (Max) @ Id: 4.5V @ 1mA,

DI9952T

diel: 2661

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.9A,

SP8M5FU6TB

diel: 3289

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, 7A, Rds On (max.) @ Id, Vgs: 28 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

IRF7307PBF

diel: 94382

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.2A, 4.3A, Rds On (max.) @ Id, Vgs: 50 mOhm @ 2.6A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,

IRF8915

diel: 2731

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8.9A, Rds On (max.) @ Id, Vgs: 18.3 mOhm @ 8.9A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

IRF7756TR

diel: 3371

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.3A, Rds On (max.) @ Id, Vgs: 40 mOhm @ 4.3A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

IRF7506TR

diel: 2648

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.7A, Rds On (max.) @ Id, Vgs: 270 mOhm @ 1.2A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

IRF7328PBF

diel: 58156

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

IRF7756GTRPBF

diel: 2800

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.3A, Rds On (max.) @ Id, Vgs: 40 mOhm @ 4.3A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

CTLDM303N-M832DS TR

diel: 191348

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.6A, Rds On (max.) @ Id, Vgs: 40 mOhm @ 1.8A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,