Tranzistory - FET, MOSFET - polia

SP8M2FU6TB

SP8M2FU6TB

diel: 156997

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, Rds On (max.) @ Id, Vgs: 83 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania
MP6K31TR

MP6K31TR

diel: 2806

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2A, Rds On (max.) @ Id, Vgs: 290 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania
FDMS3616S

FDMS3616S

diel: 2851

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 16A, 18A, Rds On (max.) @ Id, Vgs: 6.6 mOhm @ 16A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania
FDW2507NZ

FDW2507NZ

diel: 2692

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.5A, Rds On (max.) @ Id, Vgs: 19 mOhm @ 7.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania
NTQD6968NR2G

NTQD6968NR2G

diel: 2683

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.2A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 7A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Na priania
NDS9925A

NDS9925A

diel: 2695

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 60 mOhm @ 4.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
NTZD3154NT1H

NTZD3154NT1H

diel: 188943

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 540mA, Rds On (max.) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
ECH8675-TL-H

ECH8675-TL-H

diel: 2918

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 46 mOhm @ 3A, 4.5V,

Na priania
FDS6984S

FDS6984S

diel: 2757

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.5A, 8.5A, Rds On (max.) @ Id, Vgs: 19 mOhm @ 8.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
NDS9942

NDS9942

diel: 2712

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, 2.5A, Rds On (max.) @ Id, Vgs: 125 mOhm @ 1A, 10V,

Na priania
NTMD2P01R2

NTMD2P01R2

diel: 2666

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 16V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.3A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 2.4A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania
FDJ1027P

FDJ1027P

diel: 2758

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.8A, Rds On (max.) @ Id, Vgs: 160 mOhm @ 2.8A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania
NDS9956A

NDS9956A

diel: 2657

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.7A, Rds On (max.) @ Id, Vgs: 80 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 2.8V @ 250µA,

Na priania
NTHD5905T1

NTHD5905T1

diel: 2720

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 8V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, Rds On (max.) @ Id, Vgs: 90 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA,

Na priania
MMDF2N02ER2

MMDF2N02ER2

diel: 2712

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.6A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
NDM3000

NDM3000

diel: 2702

Typ FET: 3 N and 3 P-Channel (3-Phase Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, Rds On (max.) @ Id, Vgs: 90 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
NDS8926

NDS8926

diel: 2667

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.5A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 5.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
SIA511DJ-T1-GE3

SIA511DJ-T1-GE3

diel: 2748

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
SI1970DH-T1-GE3

SI1970DH-T1-GE3

diel: 3345

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.3A, Rds On (max.) @ Id, Vgs: 225 mOhm @ 1.2A, 4.5V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

Na priania
SI7911DN-T1-GE3

SI7911DN-T1-GE3

diel: 3351

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.2A, Rds On (max.) @ Id, Vgs: 51 mOhm @ 5.7A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
SIA914DJ-T1-E3

SIA914DJ-T1-E3

diel: 2809

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 53 mOhm @ 3.7A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
SQJ940EP-T1_GE3

SQJ940EP-T1_GE3

diel: 137151

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15A (Ta), 18A (Tc), Rds On (max.) @ Id, Vgs: 16 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania
SI4804BDY-T1-E3

SI4804BDY-T1-E3

diel: 2731

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.7A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
SI1025X-T1-E3

SI1025X-T1-E3

diel: 2759

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 190mA, Rds On (max.) @ Id, Vgs: 4 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
SI1033X-T1-E3

SI1033X-T1-E3

diel: 2716

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 145mA, Rds On (max.) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Na priania
SI4544DY-T1-E3

SI4544DY-T1-E3

diel: 2827

Typ FET: N and P-Channel, Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 35 mOhm @ 6.5A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Na priania
SIS902DN-T1-GE3

SIS902DN-T1-GE3

diel: 5353

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 75V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 186 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania
SI4830ADY-T1-GE3

SI4830ADY-T1-GE3

diel: 2864

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.7A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
SI5504DC-T1-GE3

SI5504DC-T1-GE3

diel: 2847

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.9A, 2.1A, Rds On (max.) @ Id, Vgs: 85 mOhm @ 2.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Na priania
ZXMHC10A07T8TA

ZXMHC10A07T8TA

diel: 83530

Typ FET: 2 N and 2 P-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1A, 800mA, Rds On (max.) @ Id, Vgs: 700 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Na priania
DI9945T

DI9945T

diel: 2659

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 3.5A, 10V,

Na priania
IRFHS9351TR2PBF

IRFHS9351TR2PBF

diel: 2826

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.3A, Rds On (max.) @ Id, Vgs: 170 mOhm @ 3.1A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 10µA,

Na priania
IRF7750

IRF7750

diel: 2669

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.7A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 4.7A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Na priania
IRF7754GTRPBF

IRF7754GTRPBF

diel: 2807

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.5A, Rds On (max.) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

Na priania
IRF7105QTRPBF

IRF7105QTRPBF

diel: 2827

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, 2.3A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
GWM160-0055P3

GWM160-0055P3

diel: 2735

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 55V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 160A, Rds On (max.) @ Id, Vgs: 3 mOhm @ 100A, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

Na priania