Tranzistory - FET, MOSFET - polia

FDMS3616S

diel: 2851

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 16A, 18A, Rds On (max.) @ Id, Vgs: 6.6 mOhm @ 16A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

FDW2507NZ

diel: 2692

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.5A, Rds On (max.) @ Id, Vgs: 19 mOhm @ 7.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania

NTQD6968NR2G

diel: 2683

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.2A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 7A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Na priania

NDS9925A

diel: 2695

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 60 mOhm @ 4.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

NTZD3154NT1H

diel: 188943

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 540mA, Rds On (max.) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

ECH8675-TL-H

diel: 2918

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 46 mOhm @ 3A, 4.5V,

Na priania

FDS6984S

diel: 2757

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.5A, 8.5A, Rds On (max.) @ Id, Vgs: 19 mOhm @ 8.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

NDS9942

diel: 2712

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, 2.5A, Rds On (max.) @ Id, Vgs: 125 mOhm @ 1A, 10V,

Na priania

NTMD2P01R2

diel: 2666

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 16V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.3A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 2.4A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania

FDJ1027P

diel: 2758

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.8A, Rds On (max.) @ Id, Vgs: 160 mOhm @ 2.8A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania

NDS9956A

diel: 2657

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.7A, Rds On (max.) @ Id, Vgs: 80 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 2.8V @ 250µA,

Na priania

NTHD5905T1

diel: 2720

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 8V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, Rds On (max.) @ Id, Vgs: 90 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 450mV @ 250µA,

Na priania

MMDF2N02ER2

diel: 2712

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.6A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

NDM3000

diel: 2702

Typ FET: 3 N and 3 P-Channel (3-Phase Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, Rds On (max.) @ Id, Vgs: 90 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

NDS8926

diel: 2667

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.5A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 5.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

SIA511DJ-T1-GE3

diel: 2748

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

SI1970DH-T1-GE3

diel: 3345

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.3A, Rds On (max.) @ Id, Vgs: 225 mOhm @ 1.2A, 4.5V, Vgs (th) (Max) @ Id: 1.6V @ 250µA,

Na priania

SI7911DN-T1-GE3

diel: 3351

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.2A, Rds On (max.) @ Id, Vgs: 51 mOhm @ 5.7A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

SIA914DJ-T1-E3

diel: 2809

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 53 mOhm @ 3.7A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania

SQJ940EP-T1_GE3

diel: 137151

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15A (Ta), 18A (Tc), Rds On (max.) @ Id, Vgs: 16 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

SI4804BDY-T1-E3

diel: 2731

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.7A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

SI1025X-T1-E3

diel: 2759

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 190mA, Rds On (max.) @ Id, Vgs: 4 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

SI1033X-T1-E3

diel: 2716

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 145mA, Rds On (max.) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Na priania

SI4544DY-T1-E3

diel: 2827

Typ FET: N and P-Channel, Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 35 mOhm @ 6.5A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Na priania

SIS902DN-T1-GE3

diel: 5353

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 75V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 186 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania

SI4830ADY-T1-GE3

diel: 2864

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.7A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania

SI5504DC-T1-GE3

diel: 2847

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.9A, 2.1A, Rds On (max.) @ Id, Vgs: 85 mOhm @ 2.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

Na priania

Diodes Incorporated

ZXMHC10A07T8TA

diel: 83530

Typ FET: 2 N and 2 P-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1A, 800mA, Rds On (max.) @ Id, Vgs: 700 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Na priania

Diodes Incorporated

DI9945T

diel: 2659

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 3.5A, 10V,

Na priania

IRFHS9351TR2PBF

diel: 2826

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.3A, Rds On (max.) @ Id, Vgs: 170 mOhm @ 3.1A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 10µA,

Na priania

IRF7750

diel: 2669

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.7A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 4.7A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

Na priania

IRF7754GTRPBF

diel: 2807

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.5A, Rds On (max.) @ Id, Vgs: 25 mOhm @ 5.4A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

Na priania