Tranzistory - FET, MOSFET - polia | Diskrétne polovodičové výrobk | 2

TPCF8402(TE85L,F,M

diel: 2735

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, 3.2A, Rds On (max.) @ Id, Vgs: 50 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 2V @ 1mA,

Zoznam želaní

Toshiba Semiconductor and Storage

SSM6L09FUTE85LF

diel: 24307

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 400mA, 200mA, Rds On (max.) @ Id, Vgs: 700 mOhm @ 200MA, 10V, Vgs (th) (Max) @ Id: 1.8V @ 100µA,

Zoznam želaní

Toshiba Semiconductor and Storage

TPCL4201(TE85L,F)

diel: 2892

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Vgs (th) (Max) @ Id: 1.2V @ 200µA,

Zoznam želaní

Toshiba Semiconductor and Storage

TPC8207(TE12L,Q)

diel: 2742

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 4.8A, 4V, Vgs (th) (Max) @ Id: 1.2V @ 200µA,

Zoznam želaní

Toshiba Semiconductor and Storage

SSM6L11TU(TE85L,F)

diel: 2856

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 500mA, Rds On (max.) @ Id, Vgs: 145 mOhm @ 250MA, 4V, Vgs (th) (Max) @ Id: 1.1V @ 100µA,

Zoznam želaní

Toshiba Semiconductor and Storage

TPCL4203(TE85L,F)

diel: 3305

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Vgs (th) (Max) @ Id: 1.2V @ 200µA,

Zoznam želaní

Toshiba Semiconductor and Storage

TPC8221-H,LQ(S

diel: 2821

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 25 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.3V @ 100µA,

Zoznam želaní

Toshiba Semiconductor and Storage

SSM6N7002BFU(T5L,F

diel: 3306

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 200mA, Rds On (max.) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 3.1V @ 250µA,

Zoznam želaní

Toshiba Semiconductor and Storage

SSM6P36FE,LM

diel: 140070

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 330mA, Rds On (max.) @ Id, Vgs: 1.31 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Zoznam želaní

Toshiba Semiconductor and Storage

SSM6N48FU,LF

diel: 3270

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 100mA (Ta), Rds On (max.) @ Id, Vgs: 3.2 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

Zoznam želaní

Toshiba Semiconductor and Storage

SSM6N39TU,LF

diel: 2461

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.6A (Ta), Rds On (max.) @ Id, Vgs: 119 mOhm @ 1A, 4V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Zoznam želaní

Toshiba Semiconductor and Storage

SSM6N35FE,LM

diel: 102707

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 180mA, Rds On (max.) @ Id, Vgs: 3 Ohm @ 50mA, 4V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Zoznam želaní

Toshiba Semiconductor and Storage

SSM6N7002KFU,LF

diel: 124781

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 300mA, Rds On (max.) @ Id, Vgs: 1.5 Ohm @ 100mA, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

Zoznam želaní

Toshiba Semiconductor and Storage

SSM6N43FU,LF

diel: 176574

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 1.5V Drive, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 500mA, Rds On (max.) @ Id, Vgs: 630 mOhm @ 200mA, 5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Zoznam želaní

Toshiba Semiconductor and Storage

SSM6L12TU,LF

diel: 2495

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 500mA (Ta), Rds On (max.) @ Id, Vgs: 145 mOhm @ 500mA, 4.5V, 260 mOhm @ 250mA, 4V, Vgs (th) (Max) @ Id: 1.1V @ 100µA,

Zoznam želaní

Toshiba Semiconductor and Storage

TPC8408,LQ(S

diel: 128587

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.1A, 5.3A, Rds On (max.) @ Id, Vgs: 32 mOhm @ 3.1A, 10V, Vgs (th) (Max) @ Id: 2.3V @ 100µA,

Zoznam želaní

Toshiba Semiconductor and Storage

SSM6N36FE,LM

diel: 161424

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 500mA, Rds On (max.) @ Id, Vgs: 630 mOhm @ 200mA, 5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Zoznam želaní

Toshiba Semiconductor and Storage

SSM6N56FE,LM

diel: 179879

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 1.5V Drive, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 800mA, Rds On (max.) @ Id, Vgs: 235 mOhm @ 800mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Zoznam želaní

Toshiba Semiconductor and Storage

SSM6N15AFE,LM

diel: 178067

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 100mA, Rds On (max.) @ Id, Vgs: 4 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

Zoznam želaní

Toshiba Semiconductor and Storage

SSM6N15AFU,LF

diel: 175270

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 100mA, Rds On (max.) @ Id, Vgs: 3.6 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

Zoznam želaní

Toshiba Semiconductor and Storage

SSM6N58NU,LF

diel: 111011

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 1.8V Drive, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 84 mOhm @ 2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Zoznam želaní

Toshiba Semiconductor and Storage

SSM6L16FETE85LF

diel: 192590

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 100mA, Rds On (max.) @ Id, Vgs: 3 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.1V @ 0.1mA,

Zoznam želaní

Toshiba Semiconductor and Storage

SSM6N57NU,LF

diel: 182932

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 46 mOhm @ 2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Zoznam želaní

Toshiba Semiconductor and Storage

TPC8407,LQ(S

diel: 151036

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9A, 7.4A, Rds On (max.) @ Id, Vgs: 17 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.3V @ 100µA,

Zoznam želaní

Toshiba Semiconductor and Storage

SSM6N7002CFU,LF

diel: 164511

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 170mA, Rds On (max.) @ Id, Vgs: 3.9 Ohm @ 100mA, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

Zoznam želaní

Toshiba Semiconductor and Storage

TPC8223-H,LQ(S

diel: 150969

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9A, Rds On (max.) @ Id, Vgs: 17 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.3V @ 100µA,

Zoznam želaní

Toshiba Semiconductor and Storage

SSM6N44FE,LM

diel: 105414

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 100mA, Rds On (max.) @ Id, Vgs: 4 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

Zoznam želaní

Toshiba Semiconductor and Storage

SSM6N7002BFE,LM

diel: 179839

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 200mA, Rds On (max.) @ Id, Vgs: 2.1 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 3.1V @ 250µA,

Zoznam želaní

Toshiba Semiconductor and Storage

SSM6L39TU,LF

diel: 111677

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, 1.8V Drive, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 800mA, Rds On (max.) @ Id, Vgs: 143 mOhm @ 600MA, 4V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Zoznam želaní

Toshiba Semiconductor and Storage

SSM6N37FU,LF

diel: 156819

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 1.5V Drive, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 250mA (Ta), Rds On (max.) @ Id, Vgs: 2.2 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Zoznam želaní