Tranzistory - FET, MOSFET - polia

NTMFD4C20NT1G

diel: 166740

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9.1A, 13.7A, Rds On (max.) @ Id, Vgs: 7.3 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

FDPC5018SG

diel: 62456

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 17A, 32A, Rds On (max.) @ Id, Vgs: 5 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NVMFD5C478NWFT1G

diel: 6501

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9.8A (Ta), 27A (Tc), Rds On (max.) @ Id, Vgs: 17 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 20µA,

FDMA6023PZT

diel: 123244

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.6A, Rds On (max.) @ Id, Vgs: 60 mOhm @ 3.6A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDMS3626S

diel: 116036

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 17.5A, 25A, Rds On (max.) @ Id, Vgs: 5 mOhm @ 17.5A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

FDG6321C

diel: 176555

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 500mA, 410mA, Rds On (max.) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

NTMFD4C20NT3G

diel: 182368

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9.1A, 13.7A, Rds On (max.) @ Id, Vgs: 7.3 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

FDS89141

diel: 103463

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, Rds On (max.) @ Id, Vgs: 62 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

NVMFD5852NLT1G

diel: 78313

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15A, Rds On (max.) @ Id, Vgs: 6.9 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

FDMS3615S

diel: 105235

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 16A, 18A, Rds On (max.) @ Id, Vgs: 5.8 mOhm @ 16A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

FDWS9420-F085

diel: 172

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A (Tc), Rds On (max.) @ Id, Vgs: 5.8 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

EFC2J013NUZTDG

diel: 16524

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Standard, Vgs (th) (Max) @ Id: 1.3V @ 1mA,

NDC7003P

diel: 145430

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 340mA, Rds On (max.) @ Id, Vgs: 5 Ohm @ 340mA, 10V, Vgs (th) (Max) @ Id: 3.5V @ 250µA,

NTMFD4C85NT1G

diel: 29711

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15.4A, 29.7A, Rds On (max.) @ Id, Vgs: 3 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

NTMFD5C470NLT1G

diel: 6471

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11A (Ta), 36A (Tc), Rds On (max.) @ Id, Vgs: 11.5 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 20µA,

FDMQ8203

diel: 55066

Typ FET: 2 N and 2 P-Channel (H-Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 100V, 80V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.4A, 2.6A, Rds On (max.) @ Id, Vgs: 110 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

NVMFD5C650NLWFT1G

diel: 9967

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 21A (Ta), 111A (Tc), Rds On (max.) @ Id, Vgs: 4.2 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 98µA,

NTGD3133PT1G

diel: 3323

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.6A, Rds On (max.) @ Id, Vgs: 145 mOhm @ 2.2A, 4.5V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

FDS8958B_G

diel: 2939

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.4A, 4.5A, Rds On (max.) @ Id, Vgs: 26 mOhm @ 6.4A, 10V, 51 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

EFC8822R-TF

diel: 3006

MCH6605-TL-EX

diel: 2947

FDMS3620S

diel: 94876

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 17.5A, 38A, Rds On (max.) @ Id, Vgs: 4.7 mOhm @ 17.5A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

FDMS8095AC

diel: 54792

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 150V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.2A, 1A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 6.2A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

NVMFD5C680NLWFT1G

diel: 6505

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.5A (Ta), 26A (Tc), Rds On (max.) @ Id, Vgs: 28 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 13µA,

EFC3C001NUZTCG

diel: 153532

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, 2.5V Drive, Vgs (th) (Max) @ Id: 1.3V @ 1mA,

NTMFD4C86NT1G

diel: 26834

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11.3A, 18.1A, Rds On (max.) @ Id, Vgs: 5.4 mOhm @ 30A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

FDS8949-F085

diel: 10816

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 29 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

FDG6304P

diel: 174228

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 410mA, Rds On (max.) @ Id, Vgs: 1.1 Ohm @ 410mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

NDS8934

diel: 3124

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.8A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 3.8A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

FDG6316P

diel: 198667

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 700mA, Rds On (max.) @ Id, Vgs: 270 mOhm @ 700mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

NVMFD5C470NWFT1G

diel: 6533

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11.7A (Ta), 36A (Tc), Rds On (max.) @ Id, Vgs: 11.7 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 250µA,

NTMD5838NLR2G

diel: 169532

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.4A, Rds On (max.) @ Id, Vgs: 25 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NVMFD5C446NLWFT1G

diel: 6513

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 25A (Ta), 145A (Tc), Rds On (max.) @ Id, Vgs: 2.65 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 90µA,

NTMD6601NR2G

diel: 3001

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 80V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.1A, Rds On (max.) @ Id, Vgs: 215 mOhm @ 2.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

FDMD8260L

diel: 45703

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15A, Rds On (max.) @ Id, Vgs: 5.8 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

FDC6304P

diel: 105335

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 460mA, Rds On (max.) @ Id, Vgs: 1.1 Ohm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,