Tranzistory - FET, MOSFET - polia

FW274-TL-E

diel: 3030

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 37 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.6V @ 1mA,

FDC6321C

diel: 160222

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 680mA, 460mA, Rds On (max.) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDG6321C-F169

diel: 2959

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 500mA (Ta), 410mA (Ta), Rds On (max.) @ Id, Vgs: 450 mOhm @ 500mA, 4.5V, 1.1 Ohm @ 410mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

NTTFS5C471NLTAG

diel: 297

EFC6602R-TR

diel: 159385

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 2.5V Drive,

FDPC1002S

diel: 2951

FDMS7606

diel: 2977

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11.5A, 12A, Rds On (max.) @ Id, Vgs: 11.4 mOhm @ 11.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NVMFD5C446NLT1G

diel: 6539

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 25A (Ta), 145A (Tc), Rds On (max.) @ Id, Vgs: 2.65 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 90µA,

FDC6306P

diel: 165018

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.9A, Rds On (max.) @ Id, Vgs: 170 mOhm @ 1.9A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDG6301N-F085P

diel: 2942

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 220mA (Ta), Rds On (max.) @ Id, Vgs: 4 Ohm @ 220mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDG6332C-F085

diel: 342

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 700mA, 600mA, Rds On (max.) @ Id, Vgs: 300 mOhm @ 700mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDS8984

diel: 198032

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, Rds On (max.) @ Id, Vgs: 23 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

FDMC9430L-F085

diel: 211

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 12A, Rds On (max.) @ Id, Vgs: 8 mOhm @ 12A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NVMFD5C466NLT1G

diel: 9983

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 14A (Ta), 52A (Tc), Rds On (max.) @ Id, Vgs: 7.4 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 30µA,

FDS8958A

diel: 10836

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, 5A, Rds On (max.) @ Id, Vgs: 28 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

FDD8424H

diel: 181368

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9A, 6.5A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

EFC4630R-TR

diel: 3001

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, 2.5V Drive, Drain to Source Voltage (Vdss): 24V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A (Ta), Rds On (max.) @ Id, Vgs: 45 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 1.3V @ 1mA,

FDMS3606AS

diel: 63299

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 13A, 27A, Rds On (max.) @ Id, Vgs: 8 mOhm @ 13A, 10V, Vgs (th) (Max) @ Id: 2.7V @ 250µA,

FDS6982AS_G

diel: 2936

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.3A, 8.6A, Rds On (max.) @ Id, Vgs: 28 mOhm @ 6.3A, 10V, 13.5 mOhm @ 8.6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA,

ECH8651R-R-TL-HX

diel: 2970

FDZ1416NZ

diel: 131465

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Standard, Vgs (th) (Max) @ Id: 1.3V @ 250µA,

NVMFD5875NLWFT1G

diel: 147994

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, Rds On (max.) @ Id, Vgs: 33 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NVLJD4007NZTBG

diel: 108671

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 245mA, Rds On (max.) @ Id, Vgs: 7 Ohm @ 125mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

FDG6304P-F169

diel: 2990

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 410mA (Ta), Rds On (max.) @ Id, Vgs: 1.1 Ohm @ 410mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

ECH8661-TL-H

diel: 105690

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, 5.5A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 3.5A, 10V,

NTZD3155CT2G

diel: 199865

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 540mA, 430mA, Rds On (max.) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

FDMA1025P

diel: 151612

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.1A, Rds On (max.) @ Id, Vgs: 155 mOhm @ 3.1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDMD85100

diel: 46969

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10.4A, Rds On (max.) @ Id, Vgs: 9.9 mOhm @ 10.4A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

FDMD8530

diel: 84078

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 35A, Rds On (max.) @ Id, Vgs: 1.25 mOhm @ 35A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

NTD5C688NLT4G

diel: 10808

Typ FET: N-Channel, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.5A (Ta), 17A (Tc), Rds On (max.) @ Id, Vgs: 27.4 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

NTMD4840NR2G

diel: 184655

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 6.9A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

FDG8842CZ

diel: 124470

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 750mA, 410mA, Rds On (max.) @ Id, Vgs: 400 mOhm @ 750mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

FDG8850NZ

diel: 105054

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 750mA, Rds On (max.) @ Id, Vgs: 400 mOhm @ 750mA, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

NVMFD5877NLWFT1G

diel: 160834

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 39 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

FDMA1027PT

diel: 2928

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, Rds On (max.) @ Id, Vgs: 120 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 1.3V @ 250µA,

ECH8663R-TL-H

diel: 143975

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 20.5 mOhm @ 4A, 4.5V,