Tranzistory - FET, MOSFET - polia | Diskrétne polovodičové výrobk | 7

2N7335

diel: 2928

Typ FET: 4 P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 750mA, Rds On (max.) @ Id, Vgs: 1.4 Ohm @ 500mA, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Zoznam želaní

Microsemi Corporation

2N7334

diel: 2895

Typ FET: 4 N-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1A, Rds On (max.) @ Id, Vgs: 700 mOhm @ 600mA, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,

Zoznam želaní

Microsemi Corporation

APTC60DSKM24T3G

diel: 765

Typ FET: 2 N Channel (Dual Buck Chopper), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 95A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

Zoznam želaní

Microsemi Corporation

APTM100H45STG

diel: 605

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1000V (1kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 18A, Rds On (max.) @ Id, Vgs: 540 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Zoznam želaní

Microsemi Corporation

APTMC120TAM33CTPAG

diel: 107

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 78A (Tc), Rds On (max.) @ Id, Vgs: 33 mOhm @ 60A, 20V, Vgs (th) (Max) @ Id: 2.2V @ 3mA (Typ),

Zoznam želaní

Microsemi Corporation

APTM50H14FT3G

diel: 1149

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 500V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 26A, Rds On (max.) @ Id, Vgs: 168 mOhm @ 13A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,

Zoznam želaní

Microsemi Corporation

APTMC120AM25CT3AG

diel: 283

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 113A (Tc), Rds On (max.) @ Id, Vgs: 25 mOhm @ 80A, 20V, Vgs (th) (Max) @ Id: 2.2V @ 4mA (Typ),

Zoznam želaní

Microsemi Corporation

APTSM120AM08CT6AG

diel: 144

Typ FET: 2 N-Channel (Dual), Schottky, Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 370A (Tc), Rds On (max.) @ Id, Vgs: 10 mOhm @ 200A, 20V, Vgs (th) (Max) @ Id: 3V @ 10mA,

Zoznam želaní

Microsemi Corporation

APTSM120TAM33CTPAG

diel: 177

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 112A (Tc), Rds On (max.) @ Id, Vgs: 33 mOhm @ 60A, 20V, Vgs (th) (Max) @ Id: 3V @ 3mA,

Zoznam želaní

Microsemi Corporation

APTSM120AM09CD3AG

diel: 195

Typ FET: 2 N-Channel (Dual), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 337A (Tc), Rds On (max.) @ Id, Vgs: 11 mOhm @ 180A, 20V, Vgs (th) (Max) @ Id: 3V @ 9mA,

Zoznam želaní

Microsemi Corporation

APTSM120AM14CD3AG

diel: 248

Typ FET: 2 N-Channel (Dual), Schottky, Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 337A (Tc), Rds On (max.) @ Id, Vgs: 11 mOhm @ 180A, 20V, Vgs (th) (Max) @ Id: 3V @ 9mA,

Zoznam želaní

Microsemi Corporation

APTSM120AM55CT1AG

diel: 589

Typ FET: 2 N-Channel (Dual), Schottky, Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 74A (Tc), Rds On (max.) @ Id, Vgs: 50 mOhm @ 40A, 20V, Vgs (th) (Max) @ Id: 3V @ 2mA,

Zoznam želaní

Microsemi Corporation

APTSM120AM25CT3AG

diel: 290

Typ FET: 2 N-Channel (Dual), Schottky, Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 148A (Tc), Rds On (max.) @ Id, Vgs: 25 mOhm @ 80A, 20V, Vgs (th) (Max) @ Id: 3V @ 4mA,

Zoznam želaní

Microsemi Corporation

APTMC120AM08CD3AG

diel: 68

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 250A (Tc), Rds On (max.) @ Id, Vgs: 10 mOhm @ 200A, 20V, Vgs (th) (Max) @ Id: 2.2V @ 10mA (Typ),

Zoznam želaní

Microsemi Corporation

APTM50HM65FT3G

diel: 692

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 500V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 51A, Rds On (max.) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Zoznam želaní

Microsemi Corporation

APTM50AM38STG

diel: 559

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 500V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 90A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 45A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Zoznam želaní

Microsemi Corporation

APTM100H45SCTG

diel: 480

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1000V (1kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 18A, Rds On (max.) @ Id, Vgs: 540 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Zoznam želaní

Microsemi Corporation

APTM100A13SCG

diel: 292

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1000V (1kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 65A, Rds On (max.) @ Id, Vgs: 156 mOhm @ 32.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 6mA,

Zoznam želaní

Microsemi Corporation

APTM50AM24SCG

diel: 372

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 500V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 150A, Rds On (max.) @ Id, Vgs: 28 mOhm @ 75A, 10V, Vgs (th) (Max) @ Id: 5V @ 6mA,

Zoznam želaní

Microsemi Corporation

APTM120H140FT1G

diel: 1785

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 1.68 Ohm @ 7A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,

Zoznam želaní

Microsemi Corporation

APTM50H10FT3G

diel: 1187

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 500V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 37A, Rds On (max.) @ Id, Vgs: 120 mOhm @ 18.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,

Zoznam želaní

Microsemi Corporation

APTM100A13DG

diel: 505

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1000V (1kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 65A, Rds On (max.) @ Id, Vgs: 156 mOhm @ 32.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 6mA,

Zoznam želaní

Microsemi Corporation

APTC60VDAM24T3G

diel: 1155

Typ FET: 2 N-Channel (Dual), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 95A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

Zoznam želaní

Microsemi Corporation

APTM100H45FT3G

diel: 858

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1000V (1kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 18A, Rds On (max.) @ Id, Vgs: 540 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Zoznam želaní

Microsemi Corporation

APTM100A18FTG

diel: 728

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1000V (1kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 43A, Rds On (max.) @ Id, Vgs: 210 mOhm @ 21.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,

Zoznam želaní

Microsemi Corporation

APTMC120TAM12CTPAG

diel: 63

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 220A (Tc), Rds On (max.) @ Id, Vgs: 12 mOhm @ 150A, 20V, Vgs (th) (Max) @ Id: 2.4V @ 30mA (Typ),

Zoznam želaní

Microsemi Corporation

APTM20HM20FTG

diel: 799

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 200V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 89A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 44.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Zoznam želaní

Microsemi Corporation

APTC60HM70T3G

diel: 1635

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 39A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

Zoznam želaní

Microsemi Corporation

APTC60AM35SCTG

diel: 860

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 72A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 36A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2mA,

Zoznam želaní

Microsemi Corporation

APTC80DDA15T3G

diel: 1954

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 800V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 28A, Rds On (max.) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2mA,

Zoznam želaní

Microsemi Corporation

APTM50HM75FT3G

diel: 880

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 500V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 46A, Rds On (max.) @ Id, Vgs: 90 mOhm @ 23A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

Zoznam želaní

Microsemi Corporation

APTC60AM242G

diel: 951

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 95A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

Zoznam želaní

Microsemi Corporation

APTM50AM19FG

diel: 440

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 500V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 163A, Rds On (max.) @ Id, Vgs: 22.5 mOhm @ 81.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

Zoznam želaní

Microsemi Corporation

APTM120DU15G

diel: 383

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 60A, Rds On (max.) @ Id, Vgs: 175 mOhm @ 30A, 10V, Vgs (th) (Max) @ Id: 5V @ 10mA,

Zoznam želaní

Microsemi Corporation

APTC60DDAM35T3G

diel: 1490

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 72A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 72A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5.4mA,

Zoznam želaní

Microsemi Corporation

APTC60TAM24TPG

diel: 401

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 95A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 47.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 5mA,

Zoznam želaní