Tranzistory - FET, MOSFET - polia

APTM20DHM20TG

diel: 2966

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 200V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 89A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 44.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

APTM120TA57FPG

diel: 3311

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 17A, Rds On (max.) @ Id, Vgs: 684 mOhm @ 8.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

APTC80DSK15T3G

diel: 2936

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 800V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 28A, Rds On (max.) @ Id, Vgs: 150 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2mA,

APTMC60TLM55CT3AG

diel: 222

Typ FET: 4 N-Channel (Three Level Inverter), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 48A (Tc), Rds On (max.) @ Id, Vgs: 49 mOhm @ 40A, 20V, Vgs (th) (Max) @ Id: 2.2V @ 2mA (Typ),

APTMC120AM16CD3AG

diel: 166

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 131A (Tc), Rds On (max.) @ Id, Vgs: 20 mOhm @ 100A, 20V, Vgs (th) (Max) @ Id: 2.2V @ 5mA (Typ),

APTMC60TL11CT3AG

diel: 420

Typ FET: 4 N-Channel (Three Level Inverter), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 28A (Tc), Rds On (max.) @ Id, Vgs: 98 mOhm @ 20A, 20V, Vgs (th) (Max) @ Id: 2.2V @ 1mA,

APTC90AM60SCTG

diel: 647

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 900V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 59A, Rds On (max.) @ Id, Vgs: 60 mOhm @ 52A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 6mA,

APTC90H12SCTG

diel: 686

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 900V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 30A, Rds On (max.) @ Id, Vgs: 120 mOhm @ 26A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 3mA,

APTC60DSKM70CT1G

diel: 2914

Typ FET: 2 N-Channel (Dual), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 39A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

APTC60DDAM70CT1G

diel: 3376

Typ FET: 2 N-Channel (Dual), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 39A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

APTML502UM90R020T3AG

diel: 2888

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 500V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 52A, Rds On (max.) @ Id, Vgs: 108 mOhm @ 26A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

APTC60DDAM45CT1G

diel: 2940

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 49A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

APTML102UM09R004T3AG

diel: 2898

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 154A (Tc), Rds On (max.) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

APTML202UM18R010T3AG

diel: 2939

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 200V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 109A (Tc), Rds On (max.) @ Id, Vgs: 19 mOhm @ 50A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

APTML1002U60R020T3AG

diel: 3301

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1000V (1kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, Rds On (max.) @ Id, Vgs: 720 mOhm @ 10A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

APTM50DHM65T3G

diel: 3350

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 500V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 51A, Rds On (max.) @ Id, Vgs: 78 mOhm @ 42A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

APTM120VDA57T3G

diel: 2866

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 17A, Rds On (max.) @ Id, Vgs: 684 mOhm @ 8.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

APTM10DHM09T3G

diel: 2896

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 139A, Rds On (max.) @ Id, Vgs: 10 mOhm @ 69.5A, 10V, Vgs (th) (Max) @ Id: 4V @ 2.5mA,

APTM100TA35SCTPG

diel: 293

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 1000V (1kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 22A, Rds On (max.) @ Id, Vgs: 420 mOhm @ 11A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

APTC90AM60T1G

diel: 1142

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 900V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 59A, Rds On (max.) @ Id, Vgs: 60 mOhm @ 52A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 6mA,

APTC90AM602G

diel: 2917

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 900V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 59A, Rds On (max.) @ Id, Vgs: 60 mOhm @ 52A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 6mA,

APTC60DSKM70T1G

diel: 2886

Typ FET: 2 N Channel (Dual Buck Chopper), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 39A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 39A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 2.7mA,

APTC60AM83BC1G

diel: 2885

Typ FET: 3 N Channel (Phase Leg + Boost Chopper), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 36A, Rds On (max.) @ Id, Vgs: 83 mOhm @ 24.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 3mA,

APTC60DSKM45T1G

diel: 2935

Typ FET: 2 N Channel (Dual Buck Chopper), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 49A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 24.5A, 10V, Vgs (th) (Max) @ Id: 3.9V @ 3mA,

APTC60AM42F2G

diel: 2862

Typ FET: 2 N Channel (Phase Leg), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 66A, Rds On (max.) @ Id, Vgs: 42 mOhm @ 33A, 10V, Vgs (th) (Max) @ Id: 5V @ 6mA,

APTC60AM83B1G

diel: 2932

Typ FET: 3 N Channel (Phase Leg + Boost Chopper), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 36A, Rds On (max.) @ Id, Vgs: 83 mOhm @ 24.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 3mA,

APTC90H12T1G

diel: 1136

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 900V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 30A, Rds On (max.) @ Id, Vgs: 120 mOhm @ 26A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 3mA,

APTC90TAM60TPG

diel: 424

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 900V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 59A, Rds On (max.) @ Id, Vgs: 60 mOhm @ 52A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 6mA,

APTC90HM60T3G

diel: 666

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 900V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 59A, Rds On (max.) @ Id, Vgs: 60 mOhm @ 52A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 6mA,

APTC90H12T2G

diel: 2898

Typ FET: 4 N-Channel (H-Bridge), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 900V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 30A, Rds On (max.) @ Id, Vgs: 120 mOhm @ 26A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 3mA,

APTC90DSK12T1G

diel: 5403

Typ FET: 2 N Channel (Dual Buck Chopper), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 900V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 30A, Rds On (max.) @ Id, Vgs: 120 mOhm @ 26A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 3mA,

APTC90DDA12T1G

diel: 2849

Typ FET: 2 N Channel (Dual Buck Chopper), Funkcia FET: Super Junction, Drain to Source Voltage (Vdss): 900V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 30A, Rds On (max.) @ Id, Vgs: 120 mOhm @ 26A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 3mA,

APTJC120AM13VCT1AG

diel: 2840

APTM60A23FT1G

diel: 2807

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, Rds On (max.) @ Id, Vgs: 276 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 5V @ 1mA,

APTM50TDUM65PG

diel: 3356

Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 500V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 51A, Rds On (max.) @ Id, Vgs: 78 mOhm @ 25.5A, 10V, Vgs (th) (Max) @ Id: 5V @ 2.5mA,

APTM50DUM38TG

diel: 2789

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 500V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 90A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 45A, 10V, Vgs (th) (Max) @ Id: 5V @ 5mA,