Tranzistory - FET, MOSFET - polia

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Tranzistory - FET, MOSFET - polia

Rohm Semiconductor

EM6K33T2R

diel: 182538

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 1.2V Drive, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 200mA, Rds On (max.) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Zoznam želaní

Rohm Semiconductor

SP8M4FRATB

diel: 91

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9A (Ta), 7A (Ta), Rds On (max.) @ Id, Vgs: 18 mOhm @ 9A, 10V, 28 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

SP8K31FRATB

diel: 99

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A (Ta), Rds On (max.) @ Id, Vgs: 120 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

QS6K1TR

diel: 117098

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1A, Rds On (max.) @ Id, Vgs: 238 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

QS8J4TR

diel: 171717

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 56 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

SP8K3TB

diel: 123516

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

SH8KA4TB

diel: 198737

Typ FET: 2 N-Channel (Dual), Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9A, Rds On (max.) @ Id, Vgs: 21.4 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

SP8J2FU6TB

diel: 120135

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 56 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

SM6K2T110

diel: 120997

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 200mA, Rds On (max.) @ Id, Vgs: 2.4 Ohm @ 200mA, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

UT6J3TCR

diel: 114339

Typ FET: 2 P-Channel (Dual), Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, Rds On (max.) @ Id, Vgs: 85 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Zoznam želaní

Rohm Semiconductor

UT6K3TCR

diel: 167007

Typ FET: 2 N-Channel (Dual), Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.5A, Rds On (max.) @ Id, Vgs: 42 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

US6M11TR

diel: 108081

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.5A, 1.3A, Rds On (max.) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Zoznam želaní

Rohm Semiconductor

SH8K3TB1

diel: 55153

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, Rds On (max.) @ Id, Vgs: 24 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

UT6JA2TCR

diel: 157843

Typ FET: 2 P-Channel (Dual), Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

SH8J65TB1

diel: 100136

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, Rds On (max.) @ Id, Vgs: 29 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

UM6K33NTN

diel: 191317

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 1.2V Drive, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 200mA, Rds On (max.) @ Id, Vgs: 2.2 Ohm @ 200mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Zoznam želaní

Rohm Semiconductor

US6J2TR

diel: 151598

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1A, Rds On (max.) @ Id, Vgs: 390 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 2V @ 1mA,

Zoznam želaní

Rohm Semiconductor

TT8J1TR

diel: 2958

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A, Rds On (max.) @ Id, Vgs: 61 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Zoznam želaní

Rohm Semiconductor

SH8K1TB1

diel: 189574

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, Rds On (max.) @ Id, Vgs: 51 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

UT6MA3TCR

diel: 168810

Typ FET: N and P-Channel, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, 5.5A, Rds On (max.) @ Id, Vgs: 59 mOhm @ 5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

US6K4TR

diel: 182371

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.5A, Rds On (max.) @ Id, Vgs: 180 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Zoznam želaní

Rohm Semiconductor

QS8M51TR

diel: 132178

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2A, 1.5A, Rds On (max.) @ Id, Vgs: 325 mOhm @ 2A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

HP8K22TB

diel: 139519

Typ FET: 2 N-Channel (Half Bridge), Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 27A, 57A, Rds On (max.) @ Id, Vgs: 4.6 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

SP8J5FU6TB

diel: 68274

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, Rds On (max.) @ Id, Vgs: 28 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

SH8K32TB1

diel: 109582

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 65 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

UM6K31NFHATCN

diel: 9908

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 250mA (Ta), Rds On (max.) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V, Vgs (th) (Max) @ Id: 2.3V @ 1mA,

Zoznam želaní

Rohm Semiconductor

SH8M5TB1

diel: 102075

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, 7A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

SP8M3FU6TB

diel: 134363

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, 4.5A, Rds On (max.) @ Id, Vgs: 51 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

MP6K13TCR

diel: 2950

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 31 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

QS6M4TR

diel: 185861

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.5A, Rds On (max.) @ Id, Vgs: 230 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

SH8M3TB1

diel: 180841

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, 4.5A, Rds On (max.) @ Id, Vgs: 51 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

SH8M41TB1

diel: 127833

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 80V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.4A, 2.6A, Rds On (max.) @ Id, Vgs: 130 mOhm @ 3.4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

QH8KA4TCR

diel: 78816

Typ FET: 2 N-Channel (Dual), Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9A, Rds On (max.) @ Id, Vgs: 17 mOhm @ 7A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

TT8J21TR

diel: 169061

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A, Rds On (max.) @ Id, Vgs: 68 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Zoznam želaní

Rohm Semiconductor

SH8J66TB1

diel: 75609

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9A, Rds On (max.) @ Id, Vgs: 18.5 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

MP6M11TCR

diel: 2920

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, Rds On (max.) @ Id, Vgs: 98 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

178

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