Tranzistory - FET, MOSFET - polia | Diskrétne polovodičové výrobk | 5

BSM180D12P3C007

diel: 168

Typ FET: 2 N-Channel (Dual), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 180A (Tc), Vgs (th) (Max) @ Id: 5.6V @ 50mA,

Zoznam želaní

Rohm Semiconductor

BSM300D12P2E001

diel: 201

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 300A (Tc), Vgs (th) (Max) @ Id: 4V @ 68mA,

Zoznam želaní

Rohm Semiconductor

BSM080D12P2C008

diel: 263

Typ FET: 2 N-Channel (Dual), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 80A (Tc), Vgs (th) (Max) @ Id: 4V @ 13.2mA,

Zoznam želaní

Rohm Semiconductor

BSM120D12P2C005

diel: 258

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 120A (Tc), Vgs (th) (Max) @ Id: 2.7V @ 22mA,

Zoznam želaní

Rohm Semiconductor

BSM180D12P2C101

diel: 243

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 204A (Tc), Vgs (th) (Max) @ Id: 4V @ 35.2mA,

Zoznam želaní

Rohm Semiconductor

VT6J1T2CR

diel: 168368

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, 1.2V Drive, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 100mA, Rds On (max.) @ Id, Vgs: 3.8 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,

Zoznam želaní

Rohm Semiconductor

EM6K31T2R

diel: 181152

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 250mA, Rds On (max.) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V, Vgs (th) (Max) @ Id: 2.3V @ 1mA,

Zoznam želaní

Rohm Semiconductor

EM6K31GT2R

diel: 153168

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 2.5V Drive, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 250mA, Rds On (max.) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V, Vgs (th) (Max) @ Id: 2.3V @ 1mA,

Zoznam želaní

Rohm Semiconductor

VT6M1T2CR

diel: 125142

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, 1.2V Drive, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 100mA, Rds On (max.) @ Id, Vgs: 3.5 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,

Zoznam želaní

Rohm Semiconductor

EM6J1T2R

diel: 109230

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 200mA, Rds On (max.) @ Id, Vgs: 1.2 Ohm @ 200mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 100µA,

Zoznam želaní

Rohm Semiconductor

TT8J13TCR

diel: 181566

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, 1.5V Drive, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A, Rds On (max.) @ Id, Vgs: 62 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Zoznam želaní

Rohm Semiconductor

US6J11TR

diel: 145887

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.3A, Rds On (max.) @ Id, Vgs: 260 mOhm @ 1.3A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Zoznam želaní

Rohm Semiconductor

TT8J11TCR

diel: 175857

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, 1.5V Drive, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.5A, Rds On (max.) @ Id, Vgs: 43 mOhm @ 3.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Zoznam želaní

Rohm Semiconductor

SP8M24FRATB

diel: 109

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 45V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A (Ta), 3.5A (Ta), Rds On (max.) @ Id, Vgs: 46 mOhm @ 4.5A, 10V, 63 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

SP8M51FRATB

diel: 152

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A (Ta), 2.5A (Ta), Rds On (max.) @ Id, Vgs: 170 mOhm @ 3A, 10V, 290 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

TT8M3TR

diel: 154779

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, 1.5V Drive, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A, 2.4A, Rds On (max.) @ Id, Vgs: 72 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Zoznam želaní

Rohm Semiconductor

HP8KA1TB

diel: 113065

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 14A, Rds On (max.) @ Id, Vgs: 5 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 10mA,

Zoznam želaní

Rohm Semiconductor

SP8K22FRATB

diel: 87

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 45V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A (Ta), Rds On (max.) @ Id, Vgs: 46 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

SP8K33FRATB

diel: 149

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A (Ta), Rds On (max.) @ Id, Vgs: 48 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

TT8K1TR

diel: 171251

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 1.5V Drive, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A, Rds On (max.) @ Id, Vgs: 72 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Zoznam želaní

Rohm Semiconductor

TT8K11TCR

diel: 195555

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, 4V Drive, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, Rds On (max.) @ Id, Vgs: 71 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1A,

Zoznam želaní

Rohm Semiconductor

SP8K52FRATB

diel: 115

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A (Ta), Rds On (max.) @ Id, Vgs: 170 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

TT8J3TR

diel: 193760

Typ FET: 2 P-Channel (Dual), Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A, Rds On (max.) @ Id, Vgs: 84 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

SP8K32FRATB

diel: 80

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A (Ta), Rds On (max.) @ Id, Vgs: 65 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

HP8S36TB

diel: 130641

Typ FET: 2 N-Channel (Half Bridge), Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 27A, 80A, Rds On (max.) @ Id, Vgs: 2.4 mOhm @ 32A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

US6K1TR

diel: 126806

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.5A, Rds On (max.) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

US6M2GTR

diel: 127

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.5A, 1A, Rds On (max.) @ Id, Vgs: 240 mOhm @ 1.5A, 4.5V, 390 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA, 2V @ 1mA,

Zoznam želaní

Rohm Semiconductor

HS8K11TB

diel: 188805

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, 11A, Rds On (max.) @ Id, Vgs: 17.9 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

TT8K2TR

diel: 164928

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A, Rds On (max.) @ Id, Vgs: 90 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

TT8M2TR

diel: 126279

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A, Rds On (max.) @ Id, Vgs: 90 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

SP8M5FRATB

diel: 154

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A (Ta), 7A (Ta), Rds On (max.) @ Id, Vgs: 30 mOhm @ 6A, 10V, 28 mOhm @ 7A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

SP8M6FRATB

diel: 153

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A (Ta), 3.5A (Ta), Rds On (max.) @ Id, Vgs: 51 mOhm @ 5A, 10V, 90 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

SP8M21FRATB

diel: 70

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 45V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A (Ta), 4A (Ta), Rds On (max.) @ Id, Vgs: 25 mOhm @ 6A, 10V, 46 mOhm @ 4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

SP8K24FRATB

diel: 123

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 45V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A (Ta), Rds On (max.) @ Id, Vgs: 25 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

TT8J2TR

diel: 170382

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A, Rds On (max.) @ Id, Vgs: 84 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní

Rohm Semiconductor

US6K2TR

diel: 124293

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.4A, Rds On (max.) @ Id, Vgs: 240 mOhm @ 1.4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Zoznam želaní