Tranzistory - FET, MOSFET - jednotlivé

2N7639-GA

diel: 318

Technológie: SiC (Silicon Carbide Junction Transistor), Drain to Source Voltage (Vdss): 650V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15A (Tc) (155°C), Rds On (max.) @ Id, Vgs: 105 mOhm @ 15A,

2N7638-GA

diel: 339

Technológie: SiC (Silicon Carbide Junction Transistor), Drain to Source Voltage (Vdss): 650V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A (Tc) (158°C), Rds On (max.) @ Id, Vgs: 170 mOhm @ 8A,

2N7637-GA

diel: 369

Technológie: SiC (Silicon Carbide Junction Transistor), Drain to Source Voltage (Vdss): 650V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A (Tc) (165°C), Rds On (max.) @ Id, Vgs: 170 mOhm @ 7A,

2N7636-GA

diel: 431

Technológie: SiC (Silicon Carbide Junction Transistor), Drain to Source Voltage (Vdss): 650V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A (Tc) (165°C), Rds On (max.) @ Id, Vgs: 415 mOhm @ 4A,

2N7635-GA

diel: 376

Technológie: SiC (Silicon Carbide Junction Transistor), Drain to Source Voltage (Vdss): 650V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A (Tc) (165°C), Rds On (max.) @ Id, Vgs: 415 mOhm @ 4A,

2N7640-GA

diel: 339

Technológie: SiC (Silicon Carbide Junction Transistor), Drain to Source Voltage (Vdss): 650V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 16A (Tc) (155°C), Rds On (max.) @ Id, Vgs: 105 mOhm @ 16A,

GA10SICP12-263

diel: 1777

Technológie: SiC (Silicon Carbide Junction Transistor), Drain to Source Voltage (Vdss): 1200V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 25A (Tc), Rds On (max.) @ Id, Vgs: 100 mOhm @ 10A,

GA50JT06-258

diel: 161

Technológie: SiC (Silicon Carbide Junction Transistor), Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 100A (Tc), Rds On (max.) @ Id, Vgs: 25 mOhm @ 50A,

GA05JT03-46

diel: 1073

Technológie: SiC (Silicon Carbide Junction Transistor), Drain to Source Voltage (Vdss): 300V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9A (Tc), Rds On (max.) @ Id, Vgs: 240 mOhm @ 5A,

GA50JT12-247

diel: 733

Technológie: SiC (Silicon Carbide Junction Transistor), Drain to Source Voltage (Vdss): 1200V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 100A (Tc), Rds On (max.) @ Id, Vgs: 25 mOhm @ 50A,

GA05JT01-46

diel: 1236

Technológie: SiC (Silicon Carbide Junction Transistor), Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9A (Tc), Rds On (max.) @ Id, Vgs: 240 mOhm @ 5A,

GA04JT17-247

diel: 2389

Technológie: SiC (Silicon Carbide Junction Transistor), Drain to Source Voltage (Vdss): 1700V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A (Tc) (95°C), Rds On (max.) @ Id, Vgs: 480 mOhm @ 4A,

GA08JT17-247

diel: 1402

Technológie: SiC (Silicon Carbide Junction Transistor), Drain to Source Voltage (Vdss): 1700V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A (Tc) (90°C), Rds On (max.) @ Id, Vgs: 250 mOhm @ 8A,

GA20JT12-263

diel: 1840

Technológie: SiC (Silicon Carbide Junction Transistor), Drain to Source Voltage (Vdss): 1200V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 45A (Tc), Rds On (max.) @ Id, Vgs: 60 mOhm @ 20A,

GA10JT12-263

diel: 3360

Technológie: SiC (Silicon Carbide Junction Transistor), Drain to Source Voltage (Vdss): 1200V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 25A (Tc), Rds On (max.) @ Id, Vgs: 120 mOhm @ 10A,

GA05JT12-263

diel: 5916

Technológie: SiC (Silicon Carbide Junction Transistor), Drain to Source Voltage (Vdss): 1200V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15A (Tc),

GA50JT12-263

diel: 816

GA100JT17-227

diel: 253

Technológie: SiC (Silicon Carbide Junction Transistor), Drain to Source Voltage (Vdss): 1700V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 160A (Tc), Rds On (max.) @ Id, Vgs: 10 mOhm @ 100A,

GA100JT12-227

diel: 460

Technológie: SiC (Silicon Carbide Junction Transistor), Drain to Source Voltage (Vdss): 1200V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 160A (Tc), Rds On (max.) @ Id, Vgs: 10 mOhm @ 100A,

GA20JT12-247

diel: 2717

Technológie: SiC (Silicon Carbide Junction Transistor), Drain to Source Voltage (Vdss): 1200V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A (Tc), Rds On (max.) @ Id, Vgs: 70 mOhm @ 20A,

GA16JT17-247

diel: 925

Technológie: SiC (Silicon Carbide Junction Transistor), Drain to Source Voltage (Vdss): 1700V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 16A (Tc) (90°C), Rds On (max.) @ Id, Vgs: 110 mOhm @ 16A,

GA10JT12-247

diel: 3338

Technológie: SiC (Silicon Carbide Junction Transistor), Drain to Source Voltage (Vdss): 1200V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10A (Tc), Rds On (max.) @ Id, Vgs: 140 mOhm @ 10A,

GA03JT12-247

diel: 7277

Technológie: SiC (Silicon Carbide Junction Transistor), Drain to Source Voltage (Vdss): 1200V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A (Tc) (95°C), Rds On (max.) @ Id, Vgs: 460 mOhm @ 3A,

GA20SICP12-247

diel: 1734

Technológie: SiC (Silicon Carbide Junction Transistor), Drain to Source Voltage (Vdss): 1200V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 45A (Tc), Rds On (max.) @ Id, Vgs: 50 mOhm @ 20A,

GA50JT17-247

diel: 438

Technológie: SiC (Silicon Carbide Junction Transistor), Drain to Source Voltage (Vdss): 1700V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 100A (Tc), Rds On (max.) @ Id, Vgs: 25 mOhm @ 50A,

GA05JT12-247

diel: 10854

Technológie: SiC (Silicon Carbide Junction Transistor), Drain to Source Voltage (Vdss): 1200V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A (Tc), Rds On (max.) @ Id, Vgs: 280 mOhm @ 5A,

GA06JT12-247

diel: 6819

Technológie: SiC (Silicon Carbide Junction Transistor), Drain to Source Voltage (Vdss): 1200V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A (Tc) (90°C), Rds On (max.) @ Id, Vgs: 220 mOhm @ 6A,