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Tranzistory - FET, MOSFET - polia

SSM6P49NU,LF
Toshiba Semiconductor and Storage

SSM6P49NU,LF

diel: 154268

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 45 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 1.2V @ 1mA,

Na priania
SSM6N16FUTE85LF
Toshiba Semiconductor and Storage

SSM6N16FUTE85LF

diel: 9999

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 100mA, Rds On (max.) @ Id, Vgs: 3 Ohm @ 10mA, 4V, Vgs (th) (Max) @ Id: 1.1V @ 100µA,

Na priania
FDS9933A
ON Semiconductor

FDS9933A

diel: 190178

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.8A, Rds On (max.) @ Id, Vgs: 75 mOhm @ 3.8A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania
FDC6506P
ON Semiconductor

FDC6506P

diel: 194858

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.8A, Rds On (max.) @ Id, Vgs: 170 mOhm @ 1.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
NVMFD5483NLT1G
ON Semiconductor

NVMFD5483NLT1G

diel: 65498

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.4A, Rds On (max.) @ Id, Vgs: 36 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania
FDC6305N
ON Semiconductor

FDC6305N

diel: 129016

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.7A, Rds On (max.) @ Id, Vgs: 80 mOhm @ 2.7A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania
NTUD3129PT5G
ON Semiconductor

NTUD3129PT5G

diel: 2940

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 140mA, Rds On (max.) @ Id, Vgs: 5 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
NVMFD5875NLT1G
ON Semiconductor

NVMFD5875NLT1G

diel: 155747

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, Rds On (max.) @ Id, Vgs: 33 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
FDMS3668S
ON Semiconductor

FDMS3668S

diel: 82251

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 13A, 18A, Rds On (max.) @ Id, Vgs: 8 mOhm @ 13A, 10V, Vgs (th) (Max) @ Id: 2.7V @ 250µA,

Na priania
NVMFD5C470NLWFT1G
ON Semiconductor

NVMFD5C470NLWFT1G

diel: 277

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11A (Ta), 36A (Tc), Rds On (max.) @ Id, Vgs: 11.5 mOhm @ 5A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 20µA,

Na priania
FF11MR12W1M1B11BOMA1
Infineon Technologies

FF11MR12W1M1B11BOMA1

diel: 3093

Typ FET: 2 N-Channel (Dual), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 100A, Rds On (max.) @ Id, Vgs: 11 mOhm @ 100A, 15V, Vgs (th) (Max) @ Id: 5.55V @ 40mA,

Na priania
IRF6723M2DTR1P
Infineon Technologies

IRF6723M2DTR1P

diel: 3004

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 15A, Rds On (max.) @ Id, Vgs: 6.6 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.35V @ 25µA,

Na priania
TSM6968SDCA RVG
Taiwan Semiconductor Corporation

TSM6968SDCA RVG

diel: 9997

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.5A (Ta), Rds On (max.) @ Id, Vgs: 22 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
DMN2016LHAB-7
Diodes Incorporated

DMN2016LHAB-7

diel: 190312

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.5A, Rds On (max.) @ Id, Vgs: 15.5 mOhm @ 4A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

Na priania
DMG1016VQ-13
Diodes Incorporated

DMG1016VQ-13

diel: 163191

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 870mA, 640mA, Rds On (max.) @ Id, Vgs: 400 mOhm @ 600mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
DMC1030UFDB-13
Diodes Incorporated

DMC1030UFDB-13

diel: 115059

Typ FET: N and P-Channel Complementary, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.1A (Ta), 3.9A (Ta), Rds On (max.) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V, 59 mOhm @ 3.6A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
DMN2029USD-13
Diodes Incorporated

DMN2029USD-13

diel: 136935

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.8A, Rds On (max.) @ Id, Vgs: 25 mOhm @ 6.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania
ZXMHC6A07T8TA
Diodes Incorporated

ZXMHC6A07T8TA

diel: 83548

Typ FET: 2 N and 2 P-Channel (H-Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.6A, 1.3A, Rds On (max.) @ Id, Vgs: 300 mOhm @ 1.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
SH8M41TB1
Rohm Semiconductor

SH8M41TB1

diel: 127833

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 80V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.4A, 2.6A, Rds On (max.) @ Id, Vgs: 130 mOhm @ 3.4A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania
QH8KA4TCR
Rohm Semiconductor

QH8KA4TCR

diel: 78816

Typ FET: 2 N-Channel (Dual), Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9A, Rds On (max.) @ Id, Vgs: 17 mOhm @ 7A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 1mA,

Na priania
TT8J21TR
Rohm Semiconductor

TT8J21TR

diel: 169061

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A, Rds On (max.) @ Id, Vgs: 68 mOhm @ 2.5A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 1mA,

Na priania
SH8J66TB1
Rohm Semiconductor

SH8J66TB1

diel: 75609

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9A, Rds On (max.) @ Id, Vgs: 18.5 mOhm @ 9A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 1mA,

Na priania
SI3590DV-T1-GE3
Vishay Siliconix

SI3590DV-T1-GE3

diel: 199636

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A, 1.7A, Rds On (max.) @ Id, Vgs: 77 mOhm @ 3A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania
SI7998DP-T1-GE3
Vishay Siliconix

SI7998DP-T1-GE3

diel: 103462

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 25A, 30A, Rds On (max.) @ Id, Vgs: 9.3 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania
SIA915DJ-T4-GE3
Vishay Siliconix

SIA915DJ-T4-GE3

diel: 2966

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.7A (Ta), 4.5A (Tc), Rds On (max.) @ Id, Vgs: 87 mOhm @ 2.9A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Na priania
SIZ322DT-T1-GE3
Vishay Siliconix

SIZ322DT-T1-GE3

diel: 266

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 30A (Tc), Rds On (max.) @ Id, Vgs: 6.35 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 250µA,

Na priania
SI5944DU-T1-GE3
Vishay Siliconix

SI5944DU-T1-GE3

diel: 2992

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6A, Rds On (max.) @ Id, Vgs: 112 mOhm @ 3.3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

Na priania
SI7997DP-T1-GE3
Vishay Siliconix

SI7997DP-T1-GE3

diel: 69522

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 60A, Rds On (max.) @ Id, Vgs: 5.5 mOhm @ 20A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 250µA,

Na priania
EPC2106ENGRT
EPC

EPC2106ENGRT

diel: 88131

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.7A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 2A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 600µA,

Na priania
TC1550TG-G
Microchip Technology

TC1550TG-G

diel: 16138

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 500V, Rds On (max.) @ Id, Vgs: 60 Ohm @ 50mA, 10V, Vgs (th) (Max) @ Id: 4V @ 1mA,

Na priania
STL65DN3LLH5
STMicroelectronics

STL65DN3LLH5

diel: 88941

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 65A, Rds On (max.) @ Id, Vgs: 6.5 mOhm @ 9.5A, 10V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

Na priania
STS2DNF30L
STMicroelectronics

STS2DNF30L

diel: 198813

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, Rds On (max.) @ Id, Vgs: 110 mOhm @ 1A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,

Na priania
PMGD130UN,115
NXP USA Inc.

PMGD130UN,115

diel: 2962

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.2A, Rds On (max.) @ Id, Vgs: 145 mOhm @ 1.2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

Na priania
CTLDM303N-M832DS BK
Central Semiconductor Corp

CTLDM303N-M832DS BK

diel: 3045

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.6A (Ta), Rds On (max.) @ Id, Vgs: 40 mOhm @ 1.8A, 4.5V, Vgs (th) (Max) @ Id: 1.25V @ 250µA,

Na priania
MTMC8E280LBF
Panasonic Electronic Components

MTMC8E280LBF

diel: 139278

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 2A, 4.5V, Vgs (th) (Max) @ Id: 1.3V @ 1mA,

Na priania
VHM40-06P1
IXYS

VHM40-06P1

diel: 1544

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 600V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 38A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 25A, 10V, Vgs (th) (Max) @ Id: 5.5V @ 3mA,

Na priania