diel: 413
Typ FET: 6 N-Channel (3-Phase Bridge), Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 29.5A (Tc), Rds On (max.) @ Id, Vgs: 98 mOhm @ 20A, 20V, Vgs (th) (Max) @ Id: 2.2V @ 1mA (Typ),