Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 150V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 36A, 22A, Rds On (max.) @ Id, Vgs: 40 mOhm @ 31A, 10V, Vgs (th) (Max) @ Id: 5.5V @ 250µA,
Typ FET: 2 N-Channel (Dual) Common Source, Funkcia FET: Silicon Carbide (SiC), Drain to Source Voltage (Vdss): 1200V (1.2kV), Prúd - nepretržitý odtok (Id) pri 25 ° C: 58A,