Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.7A, Rds On (max.) @ Id, Vgs: 270 mOhm @ 1.2A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 21 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.3A, Rds On (max.) @ Id, Vgs: 40 mOhm @ 4.3A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.3A, Rds On (max.) @ Id, Vgs: 250 mOhm @ 1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.3A, Rds On (max.) @ Id, Vgs: 90 mOhm @ 2.2A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.4A, Rds On (max.) @ Id, Vgs: 30 mOhm @ 5.4A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.9A, Rds On (max.) @ Id, Vgs: 51 mOhm @ 3.7A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,
Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.1A, 1.5A, Rds On (max.) @ Id, Vgs: 210 mOhm @ 2.1A, 10V, Vgs (th) (Max) @ Id: 4V @ 250µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.6A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 1.8A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9A, Rds On (max.) @ Id, Vgs: 18 mOhm @ 9A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.5A, Rds On (max.) @ Id, Vgs: 29 mOhm @ 5.8A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, Rds On (max.) @ Id, Vgs: 130 mOhm @ 3A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.5A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 4.5A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.9A, Rds On (max.) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 25V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.8A, Rds On (max.) @ Id, Vgs: 11.3 mOhm @ 7.8A, 10V, Vgs (th) (Max) @ Id: 2.35V @ 25µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.2A, Rds On (max.) @ Id, Vgs: 135 mOhm @ 2.2A, 4.5V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, Rds On (max.) @ Id, Vgs: 26 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 10µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 16µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 16A, Rds On (max.) @ Id, Vgs: 61 mOhm @ 16A, 10V, Vgs (th) (Max) @ Id: 3.5V @ 9µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, Rds On (max.) @ Id, Vgs: 8.2 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 22µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 17.8 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 4V @ 50µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 55V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2A (Tc), Rds On (max.) @ Id, Vgs: 35 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2V @ 27µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.3A, Rds On (max.) @ Id, Vgs: 250 mOhm @ 1A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, Rds On (max.) @ Id, Vgs: 12.2 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 4V @ 15µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, Rds On (max.) @ Id, Vgs: 22 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 25µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9.2A, Rds On (max.) @ Id, Vgs: 17 mOhm @ 9.2A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,
Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.8A, 4.6A, Rds On (max.) @ Id, Vgs: 27 mOhm @ 6.8A, 10V, Vgs (th) (Max) @ Id: 2.3V @ 10µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.6A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 1.8A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 14A, Rds On (max.) @ Id, Vgs: 7 mOhm @ 14A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 50µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10A, 12A, Rds On (max.) @ Id, Vgs: 9.3 mOhm @ 12A, 10V, Vgs (th) (Max) @ Id: 2.55V @ 250µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, Rds On (max.) @ Id, Vgs: 7.2 mOhm @ 17A, 10V, Vgs (th) (Max) @ Id: 2.2V @ 30µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 7.8A, 8.9A, Rds On (max.) @ Id, Vgs: 21.8 mOhm @ 7.8A, 10V, Vgs (th) (Max) @ Id: 2.25V @ 25µA,
Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 55V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 20A, Rds On (max.) @ Id, Vgs: 50 mOhm @ 15A, 10V, Vgs (th) (Max) @ Id: 2V @ 19µA,
Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9.2A, Rds On (max.) @ Id, Vgs: 16.3 mOhm @ 9.2A, 10V, Vgs (th) (Max) @ Id: 2.4V @ 25µA,
