Typ FET: N and P-Channel Complementary, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 12A (Tc), Rds On (max.) @ Id, Vgs: 25 mOhm @ 12A, 10V, Vgs (th) (Max) @ Id: 2.5V @ 250µA,
Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 24 mOhm @ 7.2A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Typ FET: N and P-Channel, Common Drain, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 40V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, Rds On (max.) @ Id, Vgs: 33 mOhm @ 8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 24 mOhm @ 7.7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 24 mOhm @ 7.4A, 10V, Vgs (th) (Max) @ Id: 2.6V @ 250µA,
Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Rds On (max.) @ Id, Vgs: 56 mOhm @ 4.7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Rds On (max.) @ Id, Vgs: 60 mOhm @ 4.7A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,
Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 28 mOhm @ 7.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,