Tranzistory - FET, MOSFET - polia | Diskrétne polovodičové výrobk | 1

EPC2105ENGRT

diel: 13745

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 80V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9.5A, Rds On (max.) @ Id, Vgs: 14.5 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 2.5mA,

Zoznam želaní

EPC

EPC2100

diel: 18949

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10A (Ta), 40A (Ta), Rds On (max.) @ Id, Vgs: 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA,

Zoznam želaní

EPC

EPC2104ENGRT

diel: 13673

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 23A, Rds On (max.) @ Id, Vgs: 6.3 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 5.5mA,

Zoznam želaní

EPC

EPC2101ENGRT

diel: 13969

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9.5A, 38A, Rds On (max.) @ Id, Vgs: 11.5 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 2mA,

Zoznam želaní

EPC

EPC2103ENGRT

diel: 13895

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 80V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 23A, Rds On (max.) @ Id, Vgs: 5.5 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 7mA,

Zoznam želaní

EPC

EPC2111ENGRT

diel: 43248

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 16A (Ta), Rds On (max.) @ Id, Vgs: 19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 5mA,

Zoznam želaní

EPC

EPC2101ENG

diel: 2948

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9.5A, 38A, Rds On (max.) @ Id, Vgs: 11.5 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 2mA,

Zoznam želaní

EPC

EPC2100ENGRT

diel: 14216

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10A (Ta), 40A (Ta), Rds On (max.) @ Id, Vgs: 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA,

Zoznam želaní

EPC

EPC2106ENGRT

diel: 88131

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.7A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 2A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 600µA,

Zoznam želaní

EPC

EPC2102ENGRT

diel: 14073

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 23A (Tj), Rds On (max.) @ Id, Vgs: 4.4 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 7mA,

Zoznam želaní

EPC

EPC2103

diel: 23026

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 80V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 28A, Rds On (max.) @ Id, Vgs: 5.5 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 7mA,

Zoznam želaní

EPC

EPC2105

diel: 24303

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 80V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9.5A, 38A, Rds On (max.) @ Id, Vgs: 14.5 mOhm @ 20A, 5V, 3.4 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 2.5mA, 2.5V @ 10mA,

Zoznam želaní

EPC

EPC2100ENG

diel: 2900

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10A (Ta), 40A (Ta), Rds On (max.) @ Id, Vgs: 8.2 mOhm @ 25A, 5V, 2.1 mOhm @ 25A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA,

Zoznam želaní

EPC

EPC2105ENG

diel: 2911

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 80V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9.5A, 38A, Rds On (max.) @ Id, Vgs: 14.5 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 2.5mA,

Zoznam želaní

EPC

EPC2103ENG

diel: 2868

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 80V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 23A, Rds On (max.) @ Id, Vgs: 5.5 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 7mA,

Zoznam želaní

EPC

EPC2104

diel: 24318

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 23A, Rds On (max.) @ Id, Vgs: 6.3 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 5.5mA,

Zoznam želaní

EPC

EPC2106

diel: 24307

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.7A, Rds On (max.) @ Id, Vgs: 70 mOhm @ 2A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 600µA,

Zoznam želaní

EPC

EPC2102ENG

diel: 2960

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 23A, Rds On (max.) @ Id, Vgs: 4.4 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 7mA,

Zoznam želaní

EPC

EPC2102

diel: 24374

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 23A, Rds On (max.) @ Id, Vgs: 4.4 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 7mA,

Zoznam želaní

EPC

EPC2104ENG

diel: 2913

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 23A, Rds On (max.) @ Id, Vgs: 6.3 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 5.5mA,

Zoznam želaní

EPC

EPC2107ENGRT

diel: 82626

Typ FET: 3 N-Channel (Half Bridge + Synchronous Bootstrap), Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.7A, 500mA, Rds On (max.) @ Id, Vgs: 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA,

Zoznam želaní

EPC

EPC2107

diel: 79571

Typ FET: 3 N-Channel (Half Bridge + Synchronous Bootstrap), Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.7A, 500mA, Rds On (max.) @ Id, Vgs: 320 mOhm @ 2A, 5V, 3.3 Ohm @ 2A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA,

Zoznam želaní

EPC

EPC2111

diel: 48430

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 16A (Ta), Rds On (max.) @ Id, Vgs: 19 mOhm @ 15A, 5V, 8 mOhm @ 15A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 5mA,

Zoznam želaní

EPC

EPC2110ENGRT

diel: 67578

Typ FET: 2 N-Channel (Dual) Common Source, Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 120V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.4A, Rds On (max.) @ Id, Vgs: 60 mOhm @ 4A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 700µA,

Zoznam želaní

EPC

EPC2101

diel: 21570

Typ FET: 2 N-Channel (Half Bridge), Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9.5A, 38A, Rds On (max.) @ Id, Vgs: 11.5 mOhm @ 20A, 5V, 2.7 mOhm @ 20A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 3mA, 2.5V @ 12mA,

Zoznam želaní

EPC

EPC2110

diel: 26911

Typ FET: 2 N-Channel (Dual) Common Source, Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 120V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.4A, Rds On (max.) @ Id, Vgs: 60 mOhm @ 4A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 700µA,

Zoznam želaní

EPC

EPC2108

diel: 83651

Typ FET: 3 N-Channel (Half Bridge + Synchronous Bootstrap), Funkcia FET: GaNFET (Gallium Nitride), Drain to Source Voltage (Vdss): 60V, 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.7A, 500mA, Rds On (max.) @ Id, Vgs: 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V, Vgs (th) (Max) @ Id: 2.5V @ 100µA, 2.5V @ 20µA,

Zoznam želaní