Tranzistory - FET, MOSFET - polia

ZXMHC6A07T8TA

diel: 83548

Typ FET: 2 N and 2 P-Channel (H-Bridge), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.6A, 1.3A, Rds On (max.) @ Id, Vgs: 300 mOhm @ 1.8A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

DMP2100UFU-7

diel: 117570

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.7A, Rds On (max.) @ Id, Vgs: 38 mOhm @ 3.5A, 10V, Vgs (th) (Max) @ Id: 1.4V @ 250µA,

DMN3035LWN-13

diel: 145981

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.5A (Ta), Rds On (max.) @ Id, Vgs: 35 mOhm @ 4.8A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA,

ZXMP3A17DN8TA

diel: 244

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4.4A (Ta), Rds On (max.) @ Id, Vgs: 70 mOhm @ 3.2A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA,

DMC1015UPD-13

diel: 169319

Typ FET: N and P-Channel, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 9.5A, 6.9A, Rds On (max.) @ Id, Vgs: 17 mOhm @ 11.8A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

ZXMN6A11DN8TA

diel: 147954

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2.5A, Rds On (max.) @ Id, Vgs: 120 mOhm @ 2.5A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

DMN2013UFX-7

diel: 253

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 10A (Ta), Rds On (max.) @ Id, Vgs: 11.5 mOhm @ 8.5A, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,

DMN5010VAK-7

diel: 199988

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 280mA, Rds On (max.) @ Id, Vgs: 2 Ohm @ 50mA, 5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

DMT3011LDT-7

diel: 180855

Typ FET: 2 N-Channel (Dual) Asymmetrical, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 8A, 10.7A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 6A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

DMN33D8LDW-13

diel: 118190

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 250mA, Rds On (max.) @ Id, Vgs: 2.4 Ohm @ 250mA, 10V, Vgs (th) (Max) @ Id: 1.5V @ 100µA,

DMN2010UDZ-7

diel: 191315

Typ FET: 2 N-Channel (Dual) Common Drain, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 24V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 11A, Rds On (max.) @ Id, Vgs: 7 mOhm @ 5.5A, 4.5V, Vgs (th) (Max) @ Id: 1.5V @ 250µA,

DMC1030UFDBQ-13

diel: 156497

Typ FET: N and P-Channel Complementary, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 12V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.1A, Rds On (max.) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

DMN62D0UT-13

diel: 146726

DMP57D5UV-7

diel: 2791

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 160mA, Rds On (max.) @ Id, Vgs: 6 Ohm @ 100mA, 4V, Vgs (th) (Max) @ Id: 1V @ 250µA,

ZXMD65P03N8TA

diel: 2983

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.8A, Rds On (max.) @ Id, Vgs: 55 mOhm @ 4.9A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

ZXMD63P03XTC

diel: 2768

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 185 mOhm @ 1.2A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

ZXMN10A08DN8TC

diel: 2701

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 100V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1.6A, Rds On (max.) @ Id, Vgs: 250 mOhm @ 3.2A, 10V, Vgs (th) (Max) @ Id: 2V @ 250µA (Min),

DMC6070LFDH-7

diel: 2890

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3.1A, 2.4A, Rds On (max.) @ Id, Vgs: 85 mOhm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

ZXMD63C02XTC

diel: 2674

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Rds On (max.) @ Id, Vgs: 130 mOhm @ 1.7A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA (Min),

DMP2240UDM-7

diel: 152559

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 2A, Rds On (max.) @ Id, Vgs: 150 mOhm @ 2A, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

DMC3036LSD-13

diel: 2792

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5A, 4.5A, Rds On (max.) @ Id, Vgs: 36 mOhm @ 6.9A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

ZXMN3A04DN8TC

diel: 2746

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.5A, Rds On (max.) @ Id, Vgs: 20 mOhm @ 12.6A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

DMN32D2LV-7

diel: 141799

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 400mA, Rds On (max.) @ Id, Vgs: 1.2 Ohm @ 100mA, 4V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

ZVN4206NTC

diel: 2706

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V,

DMC3035LSD-13

diel: 2777

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 6.9A, 5A, Rds On (max.) @ Id, Vgs: 35 mOhm @ 6.9A, 10V, Vgs (th) (Max) @ Id: 2.1V @ 250µA,

DMP2100UCB9-7

diel: 181216

Typ FET: 2 P-Channel (Dual) Common Source, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 3A, Rds On (max.) @ Id, Vgs: 100 mOhm @ 1A, 4.5V, Vgs (th) (Max) @ Id: 900mV @ 250µA,

ZXMD65P02N8TC

diel: 2713

Typ FET: 2 P-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 4A, Rds On (max.) @ Id, Vgs: 50 mOhm @ 2.9A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA (Min),

ZXMD63P02XTC

diel: 2747

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Rds On (max.) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V, Vgs (th) (Max) @ Id: 700mV @ 250µA (Min),

ZDM4206NTC

diel: 2742

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 1A, Rds On (max.) @ Id, Vgs: 1 Ohm @ 1.5A, 10V, Vgs (th) (Max) @ Id: 3V @ 1mA,

DMN62D0UDW-7

diel: 163902

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 60V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 350mA, Rds On (max.) @ Id, Vgs: 2 Ohm @ 100mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,

ZXMD63C03XTC

diel: 2695

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 135 mOhm @ 1.7A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),

ZXMP3F37DN8TA

diel: 2938

Typ FET: 2 P-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 5.7A, Rds On (max.) @ Id, Vgs: 25 mOhm @ 7.1A, 10V, Vgs (th) (Max) @ Id: 3V @ 250µA,

DMN5L06VA-7

diel: 2754

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 280mA, Rds On (max.) @ Id, Vgs: 3 Ohm @ 200mA, 2.7V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

DMN5L06DW-7

diel: 3271

Typ FET: 2 N-Channel (Dual), Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 50V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 280mA, Rds On (max.) @ Id, Vgs: 3 Ohm @ 200mA, 2.7V, Vgs (th) (Max) @ Id: 1.2V @ 250µA,

ZXMN3A06N8TA

diel: 2720

Typ FET: 2 N-Channel (Dual), Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V,

ZXMD63C03XTA

diel: 66949

Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 30V, Rds On (max.) @ Id, Vgs: 135 mOhm @ 1.7A, 10V, Vgs (th) (Max) @ Id: 1V @ 250µA (Min),