Typ FET: 2 N-Channel (Dual) Matched Pair, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 10.6V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 80mA, Vgs (th) (Max) @ Id: 20mV @ 10µA,
Typ FET: 4 P-Channel, Matched Pair, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 8V, Vgs (th) (Max) @ Id: 780mV @ 1µA,
Typ FET: 4 P-Channel, Matched Pair, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 8V, Vgs (th) (Max) @ Id: 380mV @ 1µA,
Typ FET: 4 N-Channel, Matched Pair, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 10.6V, Rds On (max.) @ Id, Vgs: 500 Ohm @ 4.2V, Vgs (th) (Max) @ Id: 220mV @ 1µA,
Typ FET: 4 N-Channel, Matched Pair, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 10.6V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 80mA, Vgs (th) (Max) @ Id: 20mV @ 10µA,
Typ FET: 4 N-Channel, Matched Pair, Funkcia FET: Depletion Mode, Drain to Source Voltage (Vdss): 10.6V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 12mA, 3mA, Rds On (max.) @ Id, Vgs: 500 Ohm @ 3.6V, Vgs (th) (Max) @ Id: 360mV @ 1µA,
Typ FET: 4 N-Channel, Matched Pair, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 10.6V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 12mA, 3mA, Rds On (max.) @ Id, Vgs: 500 Ohm @ 4.8V, Vgs (th) (Max) @ Id: 820mV @ 1µA,
Typ FET: 2 N-Channel (Dual) Matched Pair, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 10.6V, Rds On (max.) @ Id, Vgs: 75 Ohm @ 5V, Vgs (th) (Max) @ Id: 1V @ 10µA,
Typ FET: 4 P-Channel, Matched Pair, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 8V, Vgs (th) (Max) @ Id: 20mV @ 1µA,
Typ FET: 4 N-Channel, Matched Pair, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 10.6V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 80mA, Rds On (max.) @ Id, Vgs: 25 Ohm, Vgs (th) (Max) @ Id: 10mV @ 10µA,
Typ FET: 4 N-Channel, Matched Pair, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 10V, Rds On (max.) @ Id, Vgs: 500 Ohm @ 5V, Vgs (th) (Max) @ Id: 1.01V @ 1µA,
Typ FET: 4 P-Channel, Matched Pair, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 10.6V, Rds On (max.) @ Id, Vgs: 1800 Ohm @ 5V, Vgs (th) (Max) @ Id: 1V @ 1µA,
Typ FET: 2 N-Channel (Dual) Matched Pair, Funkcia FET: Depletion Mode, Drain to Source Voltage (Vdss): 10.6V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 12mA, 3mA, Rds On (max.) @ Id, Vgs: 500 Ohm @ 3.6V, Vgs (th) (Max) @ Id: 360mV @ 1µA,
Typ FET: 4 P-Channel, Matched Pair, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 8V, Vgs (th) (Max) @ Id: 180mV @ 1µA,
Typ FET: 2 N-Channel (Dual) Matched Pair, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 10.6V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 40mA,
Typ FET: 2 N-Channel (Dual) Matched Pair, Funkcia FET: Depletion Mode, Drain to Source Voltage (Vdss): 10.6V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 12mA, 3mA, Rds On (max.) @ Id, Vgs: 500 Ohm @ 3.6V, Vgs (th) (Max) @ Id: 380mV @ 1µA,
Typ FET: 2 N-Channel (Dual) Matched Pair, Funkcia FET: Depletion Mode, Drain to Source Voltage (Vdss): 10.6V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 12mA, 3mA, Rds On (max.) @ Id, Vgs: 540 Ohm @ 0V, Vgs (th) (Max) @ Id: 3.45V @ 1µA,
Typ FET: 2 N-Channel (Dual) Matched Pair, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 10.6V, Rds On (max.) @ Id, Vgs: 500 Ohm @ 4.2V, Vgs (th) (Max) @ Id: 220mV @ 1µA,
Typ FET: 2 N-Channel (Dual) Matched Pair, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 10.6V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 80mA, Rds On (max.) @ Id, Vgs: 14 Ohm, Vgs (th) (Max) @ Id: 10mV @ 20µA,
