Typ FET: N and P-Channel, Funkcia FET: Logic Level Gate, Drain to Source Voltage (Vdss): 20V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 650mA, Rds On (max.) @ Id, Vgs: 230 mOhm @ 600mA, 4.5V, Vgs (th) (Max) @ Id: 1.1V @ 250µA,
Typ FET: N and P-Channel Complementary, Funkcia FET: Standard, Drain to Source Voltage (Vdss): 30V, Prúd - nepretržitý odtok (Id) pri 25 ° C: 450mA, Rds On (max.) @ Id, Vgs: 460 mOhm @ 200mA, 4.5V, Vgs (th) (Max) @ Id: 1V @ 250µA,